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LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film

外国特許コード F110005317
整理番号 E06010US
掲載日 2011年8月31日
出願国 アメリカ合衆国
出願番号 50521903
公報番号 20050158993
公報番号 7323356
出願日 平成15年2月19日(2003.2.19)
公報発行日 平成17年7月21日(2005.7.21)
公報発行日 平成20年1月29日(2008.1.29)
国際出願番号 JP2003001756
国際公開番号 WO2003071595
国際出願日 平成15年2月19日(2003.2.19)
国際公開日 平成15年8月28日(2003.8.28)
優先権データ
  • 特願2002-045417 (2002.2.21) JP
  • 特願2002-197744 (2002.7.5) JP
  • 2003WO-JP01756 (2003.2.19) WO
発明の名称 (英語) LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
発明の概要(英語) (US7323356)
Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more.
While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.
特許請求の範囲(英語) [claim1]
1. A method of producing an LnCuOX single-crystal thin film, wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te, said method comprising the steps of: growing a base thin film on a single-crystal substrate;
depositing an amorphous or polycrystalline LnCuOX thin film on said base thin film to form a laminated film;enclosing said laminated film in a closed vacuum environment, andthen annealing said laminated film at a high temperature of 500 deg. C. or more in said vacuum environment.
[claim2]
2. The method as defined in claim 1, wherein said base thin film is made of either one material selected from the group consisting of Cu, Cu2S, CuS, Cu2O, CuO, CuCl, CuCl2, CuI, Ag, Ag2S, Ag2O, AgO, AgCl, AgI and Au.
[claim3]
3. The method as defined in claim 1, wherein said single-crystal substrate is made of either one material selected from the group consisting of YSZ, Y2O3, STO, Al2O3 and MgO.
[claim4]
4. The method as defined in claim 1, wherein said base thin film is a Cu thin film, and said single-crystal substrate is made of either one material selected from the group consisting of YSZ, Y2O3 and MgO, wherein said Cu thin film is grown on a (100) plane of said single-crystal substrate.
[claim5]
5. The method as defined in claim 1, wherein said annealing step is performed in an atmosphere containing LnCuOX vapor.
[claim6]
6. The method as defined in claim 1, which includes the step of covering the surface of said deposited amorphous or polycrystalline LnCuOX thin film by an YSZ single-crystal plate in advance of said enclosing step.
[claim7]
7. The method as defined in claim 1, which includes the steps of: preparing an additional laminated film composed of said amorphous or polycrystalline LnCuOX thin film, said base thin film and said single-crystal substrate, or composed of said amorphous or polycrystalline LnCuOX thin film and said single-crystal substrate;
and
attaching the respective surfaces of said additional laminated film and said laminated film formed in said depositing step together in advance of said enclosing step.
[claim8]
8. A method of producing an Ln1-yMyCuOX single-crystal thin film, wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, 0<y<1, and M is at least one selected from the group consisting of Mg, Ca, Sr, Ba and Zn and X is at least one selected from the group consisting of S, Se and Te, said method comprising the steps of: growing a base thin film on a single-crystal substrate;
depositing an amorphous or polycrystalline Ln1-yMyCuOX thin film on said base thin film to form a laminated film;enclosing said laminated film in a closed vacuum environment, andthen annealing said laminated film at a high temperature of 500 deg. C. or more in said vacuum environment.
[claim9]
9. A method of producing a single-crystal LnCuOX1-xX'x or Ln1-yMyCuOX1-xX'x solid-solution thin film, wherein 0<y<1, 0<x<1;
Ln is at least one selected from the group consisting of lanthanide elements and yttrium;
M is at least one selected from the group consisting of Mg, Ca, Sr, Ba and Zn and each of X and X' is at least one selected from the group consisting of S, Se and Te, wherein X and X' are different elements, said method comprising the steps of: preparing a substrate consisting of the LnCuOX single-crystal thin film or the Ln1-yMyCuOX single-crystal thin film;depositing an LnCuOX1-xX'x or Ln1-yMyCuOX1-xX'x thin film on said substrate to form a laminated film;enclosing said laminated film in a vacuum chamber, andthen annealing said laminated film at a high temperature of 500 deg. C. or more in said vacuum environment.
[claim10]
10. A method of producing an LnCuOX1-xX'x single-crystal solid solution thin film, wherein 0<x<1, Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X and X' is at least one selected from the group consisting of S, Se and Te, wherein X and X' are different elements, said method comprising the steps of: growing a base thin film on a single-crystal substrate;depositing an amorphous or polycrystalline LnCuOX1-xX'x solid solution thin film on said base thin film to form a laminated film;enclosing said laminated film in a closed vacuum environment, andthen annealing said laminated film at a high temperature of 500 deg. C. or more in said vacuum environment.
  • 発明者/出願人(英語)
  • HOSONO HIDEO
  • HIRANO MASAHIRO
  • OTA HIROMICHI
  • ORITA MASAHIRO
  • HIRAMATSU HIDENORI
  • UEDA KAZUSHIGE
  • HOYA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 438/102
  • 117/8
  • 257/42
  • 257/43
  • 257/E21.462
  • 257/E29.1
  • 257/E31.027
  • 257/E31.029
  • 438/84
  • 438/85
  • 438/104
  • 501/152
参考情報 (研究プロジェクト等) ERATO HOSONO Transparent ElectroActive Materials AREA
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