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Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy 実績あり

外国特許コード F110005324
整理番号 E06702WO
掲載日 2011年8月31日
出願国 アメリカ合衆国
出願番号 53764403
公報番号 20060128124
公報番号 7220658
出願日 平成15年7月15日(2003.7.15)
公報発行日 平成18年6月15日(2006.6.15)
公報発行日 平成19年5月22日(2007.5.22)
国際出願番号 US2003021918
国際公開番号 WO2004061909
国際出願日 平成15年7月15日(2003.7.15)
国際公開日 平成16年7月22日(2004.7.22)
優先権データ
  • 2002US-60433843 (2002.12.16) US
  • 2002US-60433844 (2002.12.16) US
  • 2003WO-US21918 (2003.7.15) WO
  • 2005US-10537644 (2005.6.6) US
発明の名称 (英語) Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy 実績あり
発明の概要(英語) (US7220658)
Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.
特許請求の範囲(英語) [claim1]
1. A method of performing a lateral epitaxial overgrowth of a planar, non-polar, a-plane gallium nitride (GaN) film, comprising:
(a) patterning a mask deposited on a substrate;
and(b) performing a lateral epitaxial overgrowth of the planar, non polar, a-plane GaN film off the substrate using hydride vapor phase epitaxy, wherein the planar, non polar, a-plane GaN film nucleates only on portions of the substrate not covered by the patterned mask, the planar, non polar, a-plane GaN film grows vertically through openings in the patterned mask, and the planar, non polar, a-plane GaN film then spreads laterally above the patterned mask and across the substrate's surface.
[claim2]
2. The method of claim 1, wherein the lateral epitaxial overgrowth utilizes growth pressures of approximately atmospheric pressure (760 Torr) or below, and a carrier gas containing a fraction of hydrogen.
[claim3]
3. The method of claim 1, wherein the lateral epitaxial overgrowth reduces threading dislocation densities in the planar, non polar, a-plane GaN film.
[claim4]
4. The method of claim 1, wherein the substrate comprises sapphire.
[claim5]
5. The method of claim 1, wherein the patterned mask is comprised of a metallic material.
[claim6]
6. The method of claim 1, wherein the patterned mask is comprised of a dielectric material.
[claim7]
7. The method of claim 1, wherein the patterned mask is a silicon dioxide (SiO2) mask containing apertures or stripes allowing access to the substrate underlying the mask.
[claim8]
8. The method of claim 1, wherein the patterning step comprises: depositing a silicon dioxide (SiO2) film on the substrate;
patterning a photoresist layer on the silicon dioxide film;etching away any portions of the silicon dioxide film exposed by the patterned photoresist layer;removing remaining portions of the photoresist layer;
and
cleaning the substrate.
[claim9]
9. The method of claim 1, wherein the substrate is coated with a template layer of GaN, aluminum nitride (AlN), aluminum gallium nitride (AlGaN), or other thin film.
[claim10]
10. The method of claim 1, wherein the substrate is a free-standing a-plane GaN, a-plane aluminum nitride (AlN), or a-plane aluminum gallium nitride (AlGaN) wafer.
[claim11]
11. The method of claim 1, wherein the substrate is coated with a nucleation layer deposited at either low temperatures or at the growth temperature.
[claim12]
12. A free-standing a-plane GaN film or substrate manufactured using the method of claim 1.
[claim13]
13. A device manufactured using the method of claim 1.
[claim14]
14. The method of claim 1, wherein the the planar, non polar, a-plane GaN film then spreads laterally above the patterned mask and across the substrat's surface in a manner that creates sharply vertical sidewalls.
[claim15]
15. The method of claim 2, wherein the growth pressure is less than 300 Torr.
[claim16]
16. The method of claim 2, wherein the growth pressure ranges from 5 to 100 Torr.
[claim17]
17. The method of claim 2, wherein the carrier gas is predominantly hydrogen.
[claim18]
18. The method of claim 2, wherein the carrier gas comprises a mixture of hydrogen and nitrogen, argon, or helium.
[claim19]
19. The device of claim 13, wherein the device is a laser diode, light-emitting diode or transistor.
[claim20]
20. A lateral epitaxial overgrowth of a planar, non-polar, a-plane gallium nitride (GaN) film off a substrate, wherein the lateral epitaxial overgrowth is created using a process comprising:
(a) patterning a dielectric mask deposited on a substrate;
and(b) performing a lateral epitaxial overgrowth of the planar, non polar, a-plane GaN film off the substrate using hydride vapor phase epitaxy, wherein the planar, non polar, a-plane GaN film nucleates only on portions of the substrate exposed by the patterned dielectric mask, the planar, non polar, a-plane GaN film grows vertically through openings in the patterned dielectric mask, and the planar, non polar, a-plane GaN film then spreads laterally above the patterned dielectric mask and across the substrate's surface.
[claim21]
21. The lateral epitaxial overgrowth of claim 20, wherein the planar, non polar, a-plane GaN film then spreads laterally above the patterned dielectric mask and across the substate's surface in a manner that creates sharply vertical sidewalls.
  • 発明者/出願人(英語)
  • HASKELL BENJAMIN A
  • CRAVEN MICHAEL D
  • FINI PAUL T
  • DENBAARS STEVEN P
  • SPECK JAMES S
  • NAKAMURA SHUJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 438/481
  • 257/E21.097
  • 257/E21.113
  • 257/E21.131
  • 257/E21.132
参考情報 (研究プロジェクト等) ERATO NAKAMURA Inhomogeneous Crystal AREA
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