TOP > 外国特許検索 > Carbon-based thin film, and process for producing the same, and member using the thin film

Carbon-based thin film, and process for producing the same, and member using the thin film

外国特許コード F110005364
整理番号 K01408WO
掲載日 2011年9月5日
出願国 アメリカ合衆国
出願番号 59010505
公報番号 20080038511
公報番号 8323752
出願日 平成17年2月25日(2005.2.25)
公報発行日 平成20年2月14日(2008.2.14)
公報発行日 平成24年12月4日(2012.12.4)
国際出願番号 JP2005003203
国際公開番号 WO2005083144
国際出願日 平成17年2月25日(2005.2.25)
国際公開日 平成17年9月9日(2005.9.9)
優先権データ
  • 特願2004-053123 (2004.2.27) JP
  • 特願2004-197877 (2004.7.5) JP
  • 特願2005-005371 (2005.1.12) JP
  • 2005JP003203 (2005.2.25) WO
発明の名称 (英語) Carbon-based thin film, and process for producing the same, and member using the thin film
発明の概要(英語) The present invention provides a novel carbon-based material in which carbons different in property are combined in such a manner as to be applicable to a device.
The carbon-based thin film provides a carbon-based thin film 10 including first phases 1 that contain amorphous carbon and extend in a film thickness direction, and a second phase 2 that contains a graphite structure and intervenes between the first phases 1.
In the thin film, at least one selected from the group consisting of the following a) to e) is satisfied: a) the second phase contains more graphite structures per unit volume than the first phases; b) a density of the second phase is larger than that of the first phases; c) an electric resistivity of the second phase is lower than that of the first phases; d) an elastic modulus of the second phase is higher than that of the first phases; and e) in the second phase, a basal plane of the graphite structure is oriented along the film thickness direction.
従来技術、競合技術の概要(英語) BACKGROUND ART
There are various kinds of carbon-based materials whose properties differ greatly corresponding to bonding configurations of carbons.
These carbon-based materials include new materials of which superior properties have been confirmed and that are expected to be widely used in the field of an electronic device, a hydrogen storage material, and the like, as in the case of a carbon nanotube and fullerene.
There has been proposed a process for producing these new carbon-based materials easily and with good reproducibility (for example, JP 9(1997)-309713 A).
In the field of hydrogen absorption, a carbon-based material using amorphous carbon has been proposed.
For example, JP 2001-106516 A discloses layer-structured amorphous carbon including carbon crystallites of hydrocarbon, as a material having a large hydrogen storage capacity per volume.
JP 2002-28483 A discloses a reactant formed from amorphous carbon and an alkaline metal as a material that can occlude hydrogen easily at around room temperature.
JP 2001-261318 A discloses a multilayer film in which low hardness carbon films containing graphite clusters that have an average size of 2 nm or more, and high hardness carbon films containing graphite clusters that have an average size of 1 nm or less are laminated alternately.
This multilayer film can be used as a coating film for various members that has improved wear resistance and frictional performance.

特許請求の範囲(英語) [claim1]
1. A process for producing a carbon-based thin film that consists of carbon or of carbon and at least one selected from a group consisting of hydrogen, nitrogen, boron and silicon, the process comprising the following steps of: forming an amorphous carbon-based thin film that includes columnar first phases extending in a film thickness direction, and a second phase intervening between the first phases so that an amount of a graphite structure per unit volume in the second phase is smaller than that in the first phases and so that a density of the second phase is lower than that of the first phases; and
after forming the amorphous carbon-based thin film, forming a graphite structure at least in the second phase by supplying energy to the amorphous carbon-based thin film so that the amount of the graphite structure per unit volume in the second phase is larger than that in the first phases, so that the density of the second phase is higher than that of the first phases and so that in the second phase, a basal plane of the graphite structure is oriented along the film thickness direction,
wherein the amorphous carbon-based thin film is supplied with the energy by an electron beam irradiation with an intensity of 1 * 1017/cm2.sec or less.
[claim2]
2. The process for producing a carbon-based thin film according to claim 1, wherein the amorphous carbon-based thin film is formed by a vapor phase deposition method.
[claim3]
3. The process for producing a carbon-based thin film according to claim 2, wherein the amorphous carbon-based thin film is formed by a physical vapor deposition method, and the deposition method satisfies at least one of a condition A that a substrate temperature is 773 K or less and a condition B that an atmospheric pressure is 1.33 Pa or more.
[claim4]
4. The process for producing a carbon-based thin film according to claim 2, wherein the amorphous carbon-based thin film is formed in an atmosphere containing at least one selected from the group consisting of a hydrogen atom-containing gas and a nitrogen atom-containing gas.
[claim5]
5. The process for producing a carbon-based thin film according to claim 1, wherein the amorphous carbon-based thin film is formed so that a density of the second phase is lower than that of the first phases and that a structural change of the second phase by supplying energy to the amorphous carbon-based thin film is made more easily to occur than the structural change of the first phases.
[claim6]
6. The process for producing a carbon-based thin film according to claim 1, wherein energy is supplied so that at least one selected from the group consisting of the following a) to d) is satisfied: a) the second phase contains more graphite structures per unit volume than the first phases;
b) a density of the second phase is larger than that of the first phases;
c) an electric resistivity of the second phase is lower than that of the first phases; and
d) an elastic modulus of the second phase is higher than that of the first phases.
[claim7]
7. The process for producing a carbon-based thin film according to claim 1, wherein the amorphous carbon-based thin film is formed so that the second phase forms a network between the first phases.
[claim8]
8. The process for producing a carbon-based thin film according to claim 1, wherein the energy is supplied only to a portion of the amorphous carbon-based thin film.
[claim9]
9. The process for producing a carbon-based thin film according to claim 8, wherein an electron beam is irradiated onto a surface of the amorphous carbon-based thin film in a state that the surface is partially masked.
  • 発明者/出願人(英語)
  • IWAMURA EIJI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 427/551
  • 250/492.3
  • 427/595
  • 427/596
参考情報 (研究プロジェクト等) PRESTO Structural Ordering and Physical Properties AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close