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Semiconductor material, solar cell using the semiconductor material, and methods for producing the semiconductor material and the solar cell 新技術説明会

外国特許コード F110005405
整理番号 K02804WO
掲載日 2011年9月5日
出願国 アメリカ合衆国
出願番号 67574108
公報番号 20100252097
公報番号 8728854
出願日 平成20年8月27日(2008.8.27)
公報発行日 平成22年10月7日(2010.10.7)
公報発行日 平成26年5月20日(2014.5.20)
国際出願番号 JP2008065312
国際公開番号 WO2009028560
国際出願日 平成20年8月27日(2008.8.27)
国際公開日 平成21年3月5日(2009.3.5)
優先権データ
  • 特願2007-223671 (2007.8.30) JP
  • 2008JP065312 (2008.8.27) WO
発明の名称 (英語) Semiconductor material, solar cell using the semiconductor material, and methods for producing the semiconductor material and the solar cell 新技術説明会
発明の概要(英語) A method for producing a semiconductor material, comprises a step of allowing impurity atoms, Ba atoms and Si atoms to react with each other, the impurity atoms being at least one atom selected from the group consisting of As atom, Sb atom, Bi atom and N atom; and a solar cell comprises the semiconductor material.
特許請求の範囲(英語) [claim1]
1. A method for producing a solar cell, comprising steps of: forming a barium silicide layer by allowing Si atoms and Ba atoms to react with each other on a substrate;
forming an impurity-doped barium silicide layer on a surface of the barium silicide layer by vapor-depositing impurity atoms, which are Sb atoms, Ba atoms and Si atoms on the surface of the barium silicide layer and allowing the atoms to react with each other, wherein during said vapor-depositing a temperature of a vapor deposition source of the impurity atoms is controlled in a range of 300 deg. C. to 350 deg. C. to thereby adjust an electron density of the impurity-doped barium silicide layer to a value in a range of 1017 cm-3 to 1020 cm-3;
forming a lower electrode on the substrate; and
forming an upper electrode on a surface of the impurity-doped barium silicide layer.
[claim2]
2. The method for producing a solar cell according to claim 1, wherein at least one surface of the substrate is formed from Si, and
in the step of forming the barium silicide layer, the Ba atoms are introduced into the Si surface of the substrate to allow the Si atoms and the Ba atoms to react with each other.
[claim3]
3. The method for producing a solar cell according to claim 1, wherein, in at least one of the step of forming the barium silicide layer and the step of forming the impurity-doped barium silicide layer, alkaline earth metal atoms which are at least one atom selected from the group consisting of Sr atom, Ca atom, and Mg atom are additionally allowed to react.
[claim4]
4. The method for producing a solar cell according to claim 1, wherein the barium silicide layer is formed by an epitaxy method.
[claim5]
5. A method for producing a solar cell, comprising steps of: forming a metal silicide layer by allowing Si atoms and metal atoms belonging to any one of Groups 9 and 10 of the periodic table to react with each other on a substrate;
forming a barium silicide layer by allowing Ba atoms and Si atoms to react with each other on the metal silicide layer;
forming an impurity-doped barium silicide layer on a surface of the barium silicide layer by vapor-depositing impurity atoms, which are Sb atoms, Ba atoms and Si atoms on the surface of the barium silicide layer and allowing the atoms to react with each other, wherein during said vapor-depositing a temperature of a vapor deposition source of the impurity atoms is controlled in a range of 300 deg. C. to 350 deg. C. to thereby adjust an electron density of the impurity-doped barium silicide layer to a value in a range of 1017 cm-3 to 1020 cm-3;
forming a lower electrode on at least one of the metal silicide layer and the substrate; and
forming an upper electrode on a surface of the impurity-doped barium silicide layer.
[claim6]
6. The method for producing a solar cell according to claim 5, wherein, in the step of forming the barium silicide layer, a Si ultrathin layer is formed on a surface of the metal suicide layer, and then the Ba atoms are introduced into the Si ultrathin layer to allow the Ba atoms and the Si atoms to react with each other.
[claim7]
7. The method for producing a solar cell according to claim 5, wherein, in at least one of the step of forming the barium silicide layer and the step of forming the impurity-doped barium silicide layer, alkaline earth metal atoms which are at least one atom selected from the group consisting of Sr atom, Ca atom and Mg atom are allowed to react.
[claim8]
8. The method for producing a solar cell according to claim 5, wherein the barium silicide layer is formed by an epitaxy method.
  • 発明者/出願人(英語)
  • SUEMASU TAKASHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 438/93
  • 136/261
  • 257/E31.004
参考情報 (研究プロジェクト等) PRESTO Structures and control of interfaces AREA
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