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Highly bright mechanoluminescence material and process for producing the same

外国特許コード F110005460
整理番号 K05309US
掲載日 2011年9月6日
出願国 アメリカ合衆国
出願番号 51993603
公報番号 20050224760
公報番号 7297295
出願日 平成15年7月11日(2003.7.11)
公報発行日 平成17年10月13日(2005.10.13)
公報発行日 平成19年11月20日(2007.11.20)
国際出願番号 JP2003008853
国際公開番号 WO2004007637
国際出願日 平成15年7月11日(2003.7.11)
国際公開日 平成16年1月22日(2004.1.22)
優先権データ
  • 特願2002-203781 (2002.7.12) JP
  • 2003WO-JP08853 (2003.7.11) WO
発明の名称 (英語) Highly bright mechanoluminescence material and process for producing the same
発明の概要(英語) (US7297295)
A novel highly bright mechanoluminescence material free from decay of luminescence brightness even if repeated stress is applied, comprising a composite semiconductor crystal of the general formula xM1A1.(1-x)M2A2 (wherein each of M1 and M2 independently represents an atom selected from among Zn, Mn, Cd, Cu, Eu, Fe, Co, Ni, Mg and Ca, and each of A1 and A2 is an atom independently selected from among chalcogens, provided that M1A1 is different from M2A2; and x is a positive number less than 1); and a process for producing the same.
特許請求の範囲(英語) [claim1]
1. A high-brightness mechanoluminescence material consisting of a composite semiconductor crystal represented by the formula:
xM1A1.(1-x)M2A2
wherein M1 is Mn or Eu, M2 is Zn, Mn, Cd, Cu, Eu, Fe, Co, Ni, Mg or Ca, each of A1 and A2 is the same chalcogen with the proviso that M1A1 and M2A2 differ each from the other, and x is a positive number smaller than 1 and wherein the composite semiconductor crystal has a mixed structure of the wurtzite-type structure and the zincblende-type structure.
[claim2]
2. A method for the preparation of the high-brightness mechanoluminescence material consisting of a composite semiconductor crystal represented by the formula:
xM1A1.(1-x)M2A2
wherein each of M1 and M2 is, independently from the other, an element selected from Zn, Mn, Cd, Cu, Eu, Fe, Co, Ni, Mg and Ca, each of A1 and A2 is an atom selected independently from chalcogens, with the proviso that M1A1 and M2A2 differ each from the other, and x is a positive number smaller than 1 and wherein the composite semiconductor crystal has a mixed structure of the wurtzite-type structure and the zincblende-type structure,
which comprises the steps of mixing source materials of the constituent ingredients;
heating the thus obtained mixture in vacuum at a temperature lower than the sublimation point of the product to produce a composition represented by the formula
xM1A1.(1-x)M2A2
wherein each of M1 and M2 is, independently from the other, an element selected from Zn, Mn, Cd, Cu, Eu, Fe, Co, Ni, Mg and Ca, each of A1 and A2 is an atom selected independently from chalcogens and x is a positive number smaller than 1, with the proviso that M1A1 and M2A2 differ each from the other;
causing sublimation of the composition at a temperature equal to or higher than the sublimation point of the composition;
and crystallizing the thus generated sublimate by condensation at a temperature lower than the sublimation point thereof.
  • 発明者/出願人(英語)
  • XU CHAO-NAN
  • AKIYAMA MORITO
  • SHI WENSHENG
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
国際特許分類(IPC)
米国特許分類/主・副
  • 252/301.600S
  • 252/301.400R
  • 252/301.400S
  • 252/301.600R
参考情報 (研究プロジェクト等) PRESTO Conversion and Control by Advanced Chemistry AREA
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