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Highly bright mechanoluminescence material and process for producing the same

Foreign code F110005460
File No. K05309US
Posted date Sep 6, 2011
Country United States of America
Application number 51993603
Gazette No. 20050224760
Gazette No. 7297295
Date of filing Jul 11, 2003
Gazette Date Oct 13, 2005
Gazette Date Nov 20, 2007
International application number JP2003008853
International publication number WO2004007637
Date of international filing Jul 11, 2003
Date of international publication Jan 22, 2004
Priority data
  • P2002-203781 (Jul 12, 2002) JP
  • 2003WO-JP08853 (Jul 11, 2003) WO
Title Highly bright mechanoluminescence material and process for producing the same
Abstract (US7297295)
A novel highly bright mechanoluminescence material free from decay of luminescence brightness even if repeated stress is applied, comprising a composite semiconductor crystal of the general formula xM1A1.(1-x)M2A2 (wherein each of M1 and M2 independently represents an atom selected from among Zn, Mn, Cd, Cu, Eu, Fe, Co, Ni, Mg and Ca, and each of A1 and A2 is an atom independently selected from among chalcogens, provided that M1A1 is different from M2A2; and x is a positive number less than 1); and a process for producing the same.
Scope of claims [claim1]
1. A high-brightness mechanoluminescence material consisting of a composite semiconductor crystal represented by the formula:
xM1A1.(1-x)M2A2
wherein M1 is Mn or Eu, M2 is Zn, Mn, Cd, Cu, Eu, Fe, Co, Ni, Mg or Ca, each of A1 and A2 is the same chalcogen with the proviso that M1A1 and M2A2 differ each from the other, and x is a positive number smaller than 1 and wherein the composite semiconductor crystal has a mixed structure of the wurtzite-type structure and the zincblende-type structure.
[claim2]
2. A method for the preparation of the high-brightness mechanoluminescence material consisting of a composite semiconductor crystal represented by the formula:
xM1A1.(1-x)M2A2
wherein each of M1 and M2 is, independently from the other, an element selected from Zn, Mn, Cd, Cu, Eu, Fe, Co, Ni, Mg and Ca, each of A1 and A2 is an atom selected independently from chalcogens, with the proviso that M1A1 and M2A2 differ each from the other, and x is a positive number smaller than 1 and wherein the composite semiconductor crystal has a mixed structure of the wurtzite-type structure and the zincblende-type structure,
which comprises the steps of mixing source materials of the constituent ingredients;
heating the thus obtained mixture in vacuum at a temperature lower than the sublimation point of the product to produce a composition represented by the formula
xM1A1.(1-x)M2A2
wherein each of M1 and M2 is, independently from the other, an element selected from Zn, Mn, Cd, Cu, Eu, Fe, Co, Ni, Mg and Ca, each of A1 and A2 is an atom selected independently from chalcogens and x is a positive number smaller than 1, with the proviso that M1A1 and M2A2 differ each from the other;
causing sublimation of the composition at a temperature equal to or higher than the sublimation point of the composition;
and crystallizing the thus generated sublimate by condensation at a temperature lower than the sublimation point thereof.
  • Inventor, and Inventor/Applicant
  • XU CHAO-NAN
  • AKIYAMA MORITO
  • SHI WENSHENG
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
IPC(International Patent Classification)
U.S. Cl./(Sub)
  • 252/301.600S
  • 252/301.400R
  • 252/301.400S
  • 252/301.600R
Reference ( R and D project ) (In Japanese)PRESTO Conversion and Control by Advanced Chemistry AREA
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