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Core-shell structure having controlled cavity inside and structure comprising the core-shell structure as component, and method for preparation thereof

外国特許コード F110005481
整理番号 K05502US
掲載日 2011年9月6日
出願国 アメリカ合衆国
出願番号 50554203
公報番号 20050082521
公報番号 7381465
出願日 平成15年2月17日(2003.2.17)
公報発行日 平成17年4月21日(2005.4.21)
公報発行日 平成20年6月3日(2008.6.3)
国際出願番号 JP2003001651
国際公開番号 WO2003072488
国際出願日 平成15年2月17日(2003.2.17)
国際公開日 平成15年9月4日(2003.9.4)
優先権データ
  • 特願2002-052395 (2002.2.27) JP
  • 2003WO-JP01651 (2003.2.17) WO
発明の名称 (英語) Core-shell structure having controlled cavity inside and structure comprising the core-shell structure as component, and method for preparation thereof
発明の概要(英語) (US7381465)
A core-shell structure comprises a core ( 2 ) comprising nanoparticles and a shell ( 4 ) coating the core ( 2 ), and its void space ( 3 ) formed by the core ( 2 ) and the shell ( 4 ) is controlled.
A method of preparing the core-shell structure comprises: forming particles comprising a photoetchable semiconductor, metal or polymer and coating the particles with a shell ( 4 ) comprising a non-photoetchable semiconductor, metal or polymer, to form a core-shell structure ( 5 ); and irradiating the core-shell structure with a light having a controlled wavelength in the photoetching solution to form an adjustable void space inside a shell ( 3 ) within the core-shell structure by the size-selective photoetching method.
The core-shell structure allows the preparation of a catalyst exhibiting an extremely high efficiency, and can be used as a precursor for preparing a nanomaterial required for a nanodevice.
特許請求の範囲(英語) [claim1]
1. A core-shell structure having a void space of predetermined size inside a shell, comprising: a core comprising nanoparticles, said core is a photoetchable solid;
a shell coating said core, said shell is a non-photoetchable material;
and
a void space defined by a space between said core and said shell,wherein said predetermined size of said void space is 1 nm to about 50 nm in diameter.
[claim2]
2. The core-shell structure having a void space of predetermined size inside a shell as set forth in claim 1, wherein said shell has an opening with a predetermined shape.
[claim3]
3. The core-shell structure having a void space of predetermined size inside a shell as set forth in claim 1, wherein said core comprising said photo etchable solid is etchable by irradiating a light in a photoetching solution, and said solid comprises a metal, a metal oxide, a semiconductor, or a polymer having a photoabsorption edge.
[claim4]
4. The core-shell structure having a void space of predetermined size inside a shell as set forth in any one of claims 1-3, wherein said core is a semiconductor particle of metal chalcogenide, and said shell is a film having silicon-oxygen bond in its structure.
[claim5]
5. The core-shell structure having a void space of predetermined size inside a shell as set forth in claim 4, wherein said semiconductor particle of metal chalcogenide is CdS (cadmium sulfide), and said film having silicon-oxygen bond in its structure is SiOx (silicon oxide, 0<x).
[claim6]
6. A structure having as a constituent a core-shell structure with a void space of predetermined size inside a shell, having as a constituent: the core-shell structure having a void space of predetermined size inside a shell as set forth in any one of claims 1-3.
[claim7]
7. A core-shell structure having a void space of predetermined size inside a shell, comprising: a core comprising nanoparticles, said core is a photoetchable solid;
a shell containing said core, said shell is a non-photoetchable material;
and
a void space defined by a space between said core and said shell,wherein said void space is of said predetermined size and said shell has an opening with a predetermined shape.
[claim8]
8. The core-shell structure having a void space of predetermined size inside a shell, as set forth in claim 7, wherein said core comprising said photoetcable solid, comprises a metal, a metal oxide, a semiconductor, or a polymer having a photoabsorption edge.
[claim9]
9. The core-shell structure having a void space of predetermined, size inside a shell, as set forth in claim 7 or 8, wherein said core is a semiconductor particle of metal chalcogenide, and said shell is a film having silicon-oxygen bond in its structure.
[claim10]
10. The core-shell structure having a void space of predetermined size inside a shell, as set forth in claim 9, wherein said semiconductor particle of metal chalcogenide is CdS (cadmium sulfide), and said film having silicon-oxygen bond in its structure is SiOx (silicon oxide, 0<x).
[claim11]
11. A structure having as a constituent a core-shell structure with a void space of predetermined size inside a shell, having as a constituent:core-shell structure having a void space of predetermined size inside a shell as set forth in claim 7 or 8.
[claim12]
12. A core-shell structure having a void space of predetermined size inside a shell, comprising: a core made of a nano fine particle, said core is a photoetchable solid;
and
a shell having a diameter of 1 nm to about 50 nm coating said core via a void space, said shell is a non-photoetchable material;wherein said void space is controlled to said predetermined size by controlling the particle diameter of said core.
[claim13]
13. The core-shell structure having a void space of predetermined size inside a shell as set forth in claim 12, wherein said core comprising said photoetcable solid, comprises a metal, a metal oxide, a semiconductor, or a polymer having a photoabsorption edge.
[claim14]
14. The core-shell structure having a void space of predetermined size inside a shell as set forth in claim 12 or 13, wherein said core is a semiconductor particle of metal chalcogenide, and said shell is a film having silicon-oxygen bond in its structure.
[claim15]
15. The core-shell structure having a void space of predetermined size inside a shell as set forth in claim 14, wherein said semiconductor particle of metal chalcogenide is CdS (cadmium sulfide), and said film having silicon-oxygen bond in its structure is SiOx (silicon oxide, 0<x).
[claim16]
16. A structure having as a constituent a core-shell structure with a void space of predetermined size inside a shell, having as a constituent: core-shell structure having a void space of predetermined size inside a shell as set forth in claim 12 or 13.
[claim17]
17. A core-shell structure having a void space of predetermined size inside a shell, comprising: a core made of a nano fine particle, said core is a photoetchable solid;
and
a shell having a diameter of 1 nm to about 50 nm coating said core via a void space, said shell is a non-photoetchable material;wherein said void space is controlled to said predetermined size by controlling the particle diameter of said core, and further said shell has a shell hole larger than a micropore of said shell.
[claim18]
18. The core-shell structure having a void space of predetermined size inside a shell as set forth in claim 17, wherein said core comprising said photoetcable solid, comprises a metal, a metal oxide, a semiconductor, or a polymer having a photoabsorption edge.
[claim19]
19. The core-shell structure having a void space of predetermined size inside a shell as set forth in claim 17 or 18, wherein said core is a semiconductor particle of metal chalcogenide, and said shell is a film having silicon-oxygen bond in its structure.
[claim20]
20. The core-shell structure having a void space of predetermined size inside a shell as set forth in claim 19, wherein said semiconductor particle of metal chalcogenide is CdS (cadmium sulfide), and said film having silicon-oxygen bond in its structure is SiOx (silicon oxide, 0<x).
[claim21]
21. A structure having as a constituent a core-shell structure with a void space of predetermined size inside a shell, having as a constituent: the core-shell structure having a void space of predetermined size inside a shell as set forth in claim 17 or 18.
[claim22]
22. A method of preparation of a core-shell structure having a void space of predetermined size inside a shell, wherein: a particle comprising a photoetchable solid is prepared while its particle diameter is controlled;a particle surface is chemically modified with a chemical material containing a component element capable of bonding to said particle surface and a group containing a component element of non-photoetchable oxide, thereby said group is introduced into said particle surface;a coating film made of said oxide is formed by hydrolyzing said group containing a component element of non-photoetchable oxide;a core-shell structure is formed with said particle as a core, and said coating film as a shell;said core-shell structure is photo-irradiated in a photoetching solution of a predetermined wavelength;
and
a void space of predetermined size is formed inside the core-shell structure;wherein said predetermined size of said void space is 1 nm to about 50 nm in diameter.
[claim23]
23. The method of preparation of a core-shell structure having a void space of predetermined size inside a shell as set forth in claim 22, wherein, upon said chemical modification, said coating film is formed by competitively bonding said group containing a component element of said coating film and a compound not reactive with said group containing a component element of said coating film to said particle surface, and the opening of the desired shape is formed in said shell by oxidative dissociation of said compound, after forming a void space of predetermined size inside said core-shell structure.
[claim24]
24. The method of preparation of a core-shell structure having a void space of predetermined size inside a shell as set forth in claim 23, wherein: said particle consisting of a photoetchable solid is CdS;said element bonding to the particle surface is S;said component element of non-photoetchable oxide is Si;said group is (CH3O)3Si group containing Si;said chemical material is (CH3O)3Si(CH2)3SH;
and
said compound not reactive with the group containing the component element of said coating film is a thiol compound.
[claim25]
25. The method of preparation of a core-shell structure having a void space of predetermined size inside a shell as set forth in claim 24, wherein: said compound not reactive with the group containing the component element of said coating film is an alkylthiol.
[claim26]
26. The method of preparation of a core-shell structure having a void space of predetermined size inside a shell as set forth in claim 22, wherein: after said hydrolysis and further chemical modification by adding a chemical material having a hydrophilic or hydrophobic group, it is made soluble either in water or in organic solvent.
[claim27]
27. The method of preparation of a core-shell structure having a void space of predetermined size inside a shell as set forth in claim 26, wherein: said particle comprising a photoetchable solid is CdS;said element bonding to the particle surface is S;said component element of non-photoetchable oxide is Si;said group is (CH3O)3Si group containing Si;said chemical material is (CH3O)3Si(CH2)3SH;said chemical material having a hydrophilic group is an alkyl silane containing either carboxylic, quatemary ammonium, amino, sulfonic acid, or hydroxyl group;
and
said chemical material having a hydrophobic group is an n-octadecyltrimethoxysilane.
[claim28]
28. The method of preparation of a core-shell structure having a void space of predetermined size inside a shell as set forth in claim 22, wherein: said particle comprising a photoetchable solid is CdS (cadmium sulfide);said element bonding to the particle surface is S (sulfur);said component element of non-photoetchable oxide is Si (silicon);said group is (CH3O)3Si (trimethoxysilyl) group containing Si,said chemical material is (CH3O)3Si(CH2)3SH (3-mercapto-propyl trimethoxysilane);
and
said coating film formed by hydrolysis is SiOx (silicon oxide, 0<x).
[claim29]
29. The method of preparation of a core-shell structure having a void space of predetermined size inside a shell as set forth in any one of claims 22-27, wherein, upon said formation of a void space of predetermined size inside the shell in the core-shell structure by photo-irradiation with a predetermined wavelength, the particle diameter is controlled by photoetching with the light of wavelength of absorption edge corresponding to said predetermined particle diameter.
  • 発明者/出願人(英語)
  • TORIMOTO TSUKASA
  • OHTANI BUNSHO
  • IWASAKI KENTARO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 428/403
  • 427/215
  • 977/775
  • 977/777
  • 977/824
参考情報 (研究プロジェクト等) PRESTO Light and Control AREA
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