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Quantum beam aided atomic force microscopy and quantum beam aided atomic force microscope 新技術説明会

外国特許コード F110005530
整理番号 N061-01WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 58703104
公報番号 20070215804
公報番号 7534999
出願日 平成16年12月21日(2004.12.21)
公報発行日 平成19年9月20日(2007.9.20)
公報発行日 平成21年5月19日(2009.5.19)
国際出願番号 JP2004019092
国際公開番号 WO2005103647
国際出願日 平成16年12月21日(2004.12.21)
国際公開日 平成17年11月3日(2005.11.3)
優先権データ
  • 特願2004-126099 (2004.4.21) JP
  • 2004JP019092 (2004.12.21) WO
発明の名称 (英語) Quantum beam aided atomic force microscopy and quantum beam aided atomic force microscope 新技術説明会
発明の概要(英語) A quantum beam aided atomic force microscopy and quantum beam aided atomic force microscope that can simultaneously perform atomic-level configuration observation and elemental analysis with the use of an atomic force microscope and further can effect analysis of the chemical state of sample surface and that as being operable in liquids, can realize the elemental analysis and chemical state analysis of biosamples with an atomic-level resolving power.
Accordingly, atoms of sample surface are irradiated with quantum beams, such as charged particles, electrons and photons, having a given electron transition energy characteristic of element, and any change in interaction force between the atoms of sample surface having been irradiated with quantum beams and the distal end of the probe is detected.
従来技術、競合技術の概要(英語) BACKGROUND ART
In order to understand physical and chemical processes on material surfaces, such as catalysts, semiconductors, sensors and electronic devices, and develop highly functional materials, atomic-level elemental analysis and chemical state analysis of the surface of such materials are required.
The invention of scanning tunneling microscope (STM) in 1982 achieved the observation of the conductive material surfaces and another invention of non-contact atomic force microscope (NC-AFM) in 1995 accomplished the observation of the insulating material surfaces at the atomic level.
In addition to surface structure observation, the atomic force microscope is widely used for identifying various physical properties of materials, such as magnetic, electrical and mechanical properties, and functions like the extent of mechanical contact force and surface force for a minute.
However, microscope images obtained by the above conventional microscopes essentially involve no direct elemental or chemical state information on a observed material surface.
Meanwhile, to obtain atomic-level elemental or chemical state information of a solid surface, the following conventionally-known approaches are mainly suggested: (1) optical illumination scanning tunneling microscopy combined with visible light, (2) inelastic electron tunneling spectroscopy based on inelastic effect in tunneling process and (3) radiation-light exciting scanning tunneling microscopy combined with radiant X-ray.
Nevertheless, in the approaches of (1) and (3), practical use is not achieved despite their continued development, while the approach of (2) is characterized by the measurement of molecules attached to the solid surface, rather than the analysis of the solid surface itself.
On the other hand, a conventional non-contact atomic force microscope, as disclosed in Japanese Unexamined Patent Publication No. 2000-028511, comprises a cantilever secured to an oscillating means, a displacement detector for detecting the displacement of the cantilever, an amplifier for controlling said oscillating means, a frequency detector for detecting the output frequency of said displacement detector, a sample driving means for changing the distance between the sample and the distal end of the cantilever so as to keep the frequency detected constant and a control apparatus for each driving oscillating means with distinct oscillating voltages caused by controlling said amplifier.
The control apparatus detects the change in oscillating frequency corresponding to the change in distance between the sample and the distal end of the cantilever at each oscillating voltage from the output of said frequency detector, and determines the oscillation amplitude of the cantilever from the difference between sudden rising positions of said oscillating frequency at each oscillating voltage.
Patent Document 1: Japanese Unexamined Patent Publication No. 2000-28511

特許請求の範囲(英語) [claim1]
1. A quantum beam aided atomic force microscopy, comprising the steps of: irradiating atoms of a sample surface with quantum beams such as photons, electrons and charged particles having a given electron transition energy characteristic of element;
and detecting the change in interaction force between each of said atoms of said sample surface irradiated with said quantum beams and a distal end of a probe.
[claim2]
2. A quantum beam aided atomic force microscopy, comprising the steps of: irradiating atoms of a sample surface with given quantum beams such as photons, electrons and charged particles;
and detecting the change in interaction force between each of said atoms of said sample surface and a distal end of a probe by sequentially changing the energy of said given quantum beams.
[claim3]
3. A quantum beam aided atomic force microscopy, the atomic force microscopy comprising the steps of: relatively scanning a probe over a sample surface;
detecting the interaction force between a distal end of said probe and each of atoms of said sample surface;
and analyzing the state of said sample surface,wherein:atomic force microscope images are obtained without irradiating said sample surface with quantum beams, and atomic force microscope images are obtained under irradiation with quantum beams by irradiating said same sample surface with quantum beams such as photons, electrons and charged particles by fixing a given electron transition energy characteristic of element thereof.
[claim4]
4. The quantum beam aided atomic force microscopy, set forth in any one of claims 1 through 3, wherein: quantum beams, with which atoms of a sample surface are irradiated, are X-ray having core electron transition energy to be excited to the outermost shell characteristic of element to be detected.
[claim5]
5. A quantum beam aided atomic force microscope, the atomic force microscope comprising: a cantilever having a sharp probe that interacts with atoms of a sample surface;
a displacement sensor for detecting the deflection of said cantilever;a two-dimensional scanning means for relatively scanning said probe over said sample surface two-dimensionally in a horizontal direction thereof;
and a vertical moving means for relatively controlling the distance between said probe and said sample surface in a vertical direction,wherein: a quantum beams irradiating means is included for irradiating atoms of said sample surface with quantum beams such as photons, electrons and charged particles having a given electron transition energy characteristic of element, andsaid displacement sensor detects the change in interaction force between each of said atoms of said sample surface irradiated by said quantum beam irradiating means and a distal end of said probe.
[claim6]
6. The quantum beam aided atomic force microscope, set forth in claim 5, wherein: said displacement sensor detects the change in interaction force between said distal end of said probe and each of said atoms of said sample surface by sequentially changing the energy of quantum beams with which each of said atoms of said sample surface is irradiated by said quantum beam irradiating means.
[claim7]
7. The quantum beam aided atomic force microscope, set forth in claim 5, wherein: atomic force microscope images are outputted by relatively scanning said probe over said sample surface by said two-dimensional scanning means without irradiating said sample surface with quantum beams, and atomic force microscope images are outputted under irradiation with quantum beams by irradiating said same sample surface with quantum beams such as photons, electrons and charged particles by fixing a given electron transition energy characteristic of element thereof.
[claim8]
8. The quantum beam aided atomic force microscope, set forth in any one of claims 5 through 7, wherein quantum beams, with which atoms of a sample surface are irradiated, are X-ray having core electron transition energy to be excited to the outermost shell characteristic of element to be detected.
  • 発明者/出願人(英語)
  • SUZUKI SHUSHI
  • CHUN WANG-JAE
  • ASAKURA KIYOTAKA
  • NOMURA MASAHARU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 250/306
  • 73/105
参考情報 (研究プロジェクト等) CREST Creation of Nano-Structured Catalysts and Materials for Environmental Conservation AREA
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