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Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element

外国特許コード F110005534
整理番号 N071-01WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 55704404
公報番号 20060288925
公報番号 7442252
出願日 平成16年5月21日(2004.5.21)
公報発行日 平成18年12月28日(2006.12.28)
公報発行日 平成20年10月28日(2008.10.28)
国際出願番号 JP2004007309
国際公開番号 WO2004104276
国際出願日 平成16年5月21日(2004.5.21)
国際公開日 平成16年12月2日(2004.12.2)
優先権データ
  • 特願2003-144085 (2003.5.21) JP
  • 特願2004-150881 (2004.5.20) JP
  • 2004WO-JP07309 (2004.5.21) WO
発明の名称 (英語) Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element
発明の概要(英語) (US7442252)
The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am-1BmO3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb.
A flux layer, containing a composition satisfying the inequality 0<CUO/BI2O3<2 and/or 0<=TIO/BI2O3<7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer.
A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown.
A CuO flux layer is deposited on a wafer and Bi-Ti-O is supplied to the flux layer using a Bi6Ti3O12, Bi7Ti3O12, or Bi8Ti3O12 target of which the Bi content is greater than that of an object film such that a Bi4Ti3O12 single-crystalline thin-film is formed above the wafer.
特許請求の範囲(英語) [claim1]
1. A method for producing a multi-element oxide single crystal containing bismuth, comprising: a step of depositing a flux layer on a wafer, said flux layer containing a three-element composition satisfying the inequalities 0<CuO/Bi2O3<2 and 0<TiO/Bi2O3<7/6 on a molar basis;
and
a step of depositing a single-crystalline thin-film on the flux layer placed on the wafer.
[claim2]
2. A method for producing a multi-element oxide single crystal containing bismuth, comprising: a step of depositing a flux layer consisting of CuO on a wafer;
and
a step of supplying Bi -- Ti -- O to the flux layer to form a Bi4Ti3O12 single-crystalline thin-film above the wafer using a Bi6Ti3O12, Bi7Ti3O12, or Bi8Ti3O12 target of which the Bi content is greater than that of a object film.
[claim3]
3. The method according to claim 1 or 2, wherein the deposition of the flux layer or the single-crystalline thin-film is performed by a sputtering process, an MBE process, a pulsed laser deposition process, or an MOCVD process.
[claim4]
4. The method according to claim 1 or 2, wherein the wafer is a SrTiO3 (001) wafer, an Al2O3 wafer, a Si wafer, a LaAlO3 wafer, a MgO wafer, or a NdGaO3 wafer.
[claim5]
5. A method for producing a multi-element oxide single crystal, comprising: a step of depositing a flux layer on a wafer, said flux layer containing a three-element composition satisfying the inequalities 0<CuO/Bi2O3<2 and 0<TiO/Bi2O3<7/6 on a molar basis, anda step of depositing a single-crystalline thin-film on the flux layer placed on the wafer, wherein the single-crystalline thin-film comprises a multi-element oxide selected from the group consisting of Bi4Ti3O12, Bi4BaTi4O15, Bi4SrTi4O15, Bi4CaTi4O15, SrBi2Ta2O9, and SrBi2Nb2O9.
  • 発明者/出願人(英語)
  • KOINUMA HIDEOMI
  • MATSUMOTO YUJI
  • TAKAHASHI RYOTA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 117/89
  • 117/87
  • 117/88
  • 117/92
  • 117/93
  • 117/94
  • 117/104
  • 428/448
  • 428/450
  • 428/697
参考情報 (研究プロジェクト等) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
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