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Flux assisted solid phase epitaxy 新技術説明会

外国特許コード F110005536
整理番号 N071-05WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 59389705
公報番号 20070209571
公報番号 7507290
出願日 平成17年3月22日(2005.3.22)
公報発行日 平成19年9月13日(2007.9.13)
公報発行日 平成21年3月24日(2009.3.24)
国際出願番号 JP2005005642
国際公開番号 WO2005090649
国際出願日 平成17年3月22日(2005.3.22)
国際公開日 平成17年9月29日(2005.9.29)
優先権データ
  • 04JP-0085232 (2004.3.23) 20
  • 05WO-JP05642 (2005.3.22) 20
発明の名称 (英語) Flux assisted solid phase epitaxy 新技術説明会
発明の概要(英語) (US7507290)
A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances.
A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.
特許請求の範囲(英語) [claim1]
1. A flux assisted solid phase epitaxial growth method, characterized in that it comprises the steps of: depositing an amorphous thin film made of an objective substance and a flux of a substance producing a eutectic with said objective substance but not producing any compound with said objective substance, on a substrate at a first temperature, andheat-treating said substrate at a second temperature so as to form a eutectic made of said objective and flux substances;
whereinsaid first temperature is less than a eutectic point of said objective and flux substances, andsaid second temperature is not less than the eutectic point of said objective and flux substances and less than the lower melting point of said objective and flux substances.
[claim2]
2. A flux assisted solid phase epitaxial growth method as set forth in claim 1, characterized in that said flux is of an amount which is selected according to an amount of said objective substance to be grown so that the objective and flux substances have a composition ratio at said eutectic point.
[claim3]
3. A flux assisted solid phase epitaxial growth method, characterized in that it comprises the steps of: depositing a thin film made of an objective substance and a thin film made of a flux of a substance producing a eutectic with said objective substance but not producing any compound with said objective substance, on a substrate at a first temperature, andheat-treating said substrate at a second temperature so as to form a eutectic made of said objective and flux substances;
whereinsaid first temperature is less than a eutectic point of said objective and flux substances, andsaid second temperature is not less than the eutectic point of said objective and flux substances and less than the lower melting point of said objective and flux substances.
[claim4]
4. A flux assisted solid phase epitaxial growth method as set forth in claim 3, characterized in that said flux is of an amount which is selected according to an amount of said objective substance to be grown so that the objective and flux substances have a composition ratio at said eutectic point.
[claim5]
5. A flux assisted solid phase epitaxial growth method, characterized in that it comprises the steps of: depositing an amorphous thin film made of an objective substance and a flux of a substance producing a eutectic with said objective substance but not producing any compound with said objective substance, on a substrate at a temperature less than a eutectic point of said objective and flux substances, andheat-treating said substrate at a temperature not less than the eutectic point of said objective and flux substances and less than the lower melting point of said objective and flux substances,wherein said objective substance is a multi-component oxide which contains Bi as a constituent element, and said flux is of the substance producing the eutectic with said multi-component oxide containing Bi as a constituent element and not producing any compound therewith.
[claim6]
6. A flux assisted solid phase epitaxial growth method as set forth in claim 5, characterized in that said multi-component oxide which contains Bi as a constituent element is one selected from the group which consists of Bi4Ti3O12, Bi4BaTi4O15, SrBi2Ta2O3 and Bi2Sr2CaCu2O8, and said flux is a ternary composition of Bi2O3 -- CuO -- TiO family.
[claim7]
7. A flux assisted solid phase epitaxial growth method as set forth in claim 6, characterized in that said multi-component oxide which contains Bi as a constituent element is Bi4Ti3O12, and said ternary composition of Bi2O3 -- CuO -- TiO family is Bi2O3.
[claim8]
8. A flux assisted solid phase epitaxial growth method as set forth in claim 5, characterized in that said substrate is a single-crystal substrate or a substrate covered with a single-crystal thin film.
[claim9]
9. A flux assisted solid phase epitaxial growth method as set forth in claim 8, characterized in that said single-crystal substrate or said single-crystal thin film is of one composition selected from the group which consists of SrTiO3, Al2O3, Si, LaAlO3, MgO and NdGaO3.
[claim10]
10. A flux assisted solid phase epitaxial growth method as set forth in claim 5, characterized in that said flux is of an amount which is selected according to an amount of said objective substance to be grown so that the objective and flux substances have a composition ratio at said eutectic point.
[claim11]
11. A flux assisted solid phase epitaxial growth method, characterized in that it comprises the steps of: depositing a thin film made of an objective substance and a thin film made of a flux of a substance producing a eutectic with said objective substance but not producing any compound with said objective substance, on a substrate at a temperature less than a eutectic point of said objective and flux substances, andheat-treating said substrate at a temperature not less than the eutectic point of said objective and flux substances and less than the lower melting point of said objective and flux substances,wherein said objective substance is a multi-component oxide which contains Bi as a constituent element, and said flux is of the substance producing the eutectic with said multi-component oxide containing Bi as a constituent element and not producing any compound therewith.
[claim12]
12. A flux assisted solid phase epitaxial growth method as set forth in claim 10, characterized in that said flux is of an amount which is selected according to an amount of said objective substance to be grown so that the objective and flux substances have a composition ratio at said eutectic point.
[claim13]
13. A flux assisted solid phase epitaxial growth method as set forth in claim 10, characterized in that said substrate is a single-crystal substrate or a substrate covered with a single-crystal thin film.
[claim14]
14. A flux assisted solid phase epitaxial growth method as set forth in claim 11, characterized in that said substrate is a single-crystal substrate or a substrate covered with a single-crystal thin film.
[claim15]
15. A flux assisted solid phase epitaxial growth method as set forth in claim 12, characterized in that said substrate is a single-crystal substrate or a substrate covered with a single-crystal thin film.
  • 発明者/出願人(英語)
  • KOINUMA HIDEOMI
  • MATSUMOTO YUJI
  • TAKAHASHI RYOTA
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 117/4.0
参考情報 (研究プロジェクト等) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
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