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Superconducting film and method of manufacturing the same

外国特許コード F110005542
整理番号 N072-03WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 56980104
公報番号 20060258539
公報番号 7772157
出願日 平成16年8月27日(2004.8.27)
公報発行日 平成18年11月16日(2006.11.16)
公報発行日 平成22年8月10日(2010.8.10)
国際出願番号 JP2004012781
国際公開番号 WO2005022562
国際出願日 平成16年8月27日(2004.8.27)
国際公開日 平成17年3月10日(2005.3.10)
優先権データ
  • 特願2003-308020 (2003.8.29) JP
  • 2004WO-JP12781 (2004.8.27) WO
発明の名称 (英語) Superconducting film and method of manufacturing the same
発明の概要(英語) (US7772157)
The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film.
A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.
特許請求の範囲(英語) [claim1]
1. A superconducting film comprising: a substrate having a surface;
a superconductor layer formed on said surface of the substrate;
nano grooves formed in said substrate, the nano grooves having a defined width and defining a current flowing direction when current flows through the superconductor layer;
rows of defect inducing parts formed in the nano grooves; and
two-dimensional crystal defects in the superconductor layer on the defect inducing parts.
[claim2]
2. The superconducting film as claimed in claim 1, wherein each of said two-dimensional crystal defects is a two-dimensional crystal defect which is continuous in a current flowing direction.
[claim3]
3. The superconducting film as claimed in claim 1, wherein each of said two-dimensional crystal defects is an array of discontinuous two-dimensional crystal defects.
[claim4]
4. The superconducting film as claimed in claim 1, wherein said two-dimensional crystal defects are irregularly distributed on the substrate.
[claim5]
5. The superconducting film as claimed in claim 1, wherein said two-dimensional crystal defects are crystal grain boundaries, dislocation arrays, amorphous bodies formed from elements constituting said superconductor layer, nonsuperconductors or low critical temperature superconductors.
[claim6]
6. The superconducting film as claimed in claim 1, wherein said nano grooves have a width of not more than 100 nm and a depth of not more than 100 nm and that the average center to center distance of adjacent nano grooves in a direction perpendicular to a current flowing direction is not more than 500 nm.
[claim7]
7. The superconducting film as claimed in claim 1, wherein said substrate is a substrate of an oxide having a perovskite type crystal structure, a rock-salt type crystal structure, a spinel type crystal structure, an yttrium stabilized zirconia type structure, a fluorite type crystal structure, a rare earth C type crystal structure, or a pyrochlore type crystal structure; or an oxide substrate, a nitride substrate, a semiconductor substrate, a nickel-based alloy substrate, a copper-based alloy substrate or an iron-based alloy substrate on the surface of which a buffer layer is formed from said oxide or boride.
[claim8]
8. The superconducting film as claimed in claim 1, wherein said superconductor layer is formed from a superconducting material selected from the group consisting of copper oxide-based high temperature superconducting materials having the chemical formula LnBa2Cu3O7+x, where Ln is one or more elements selected from the group consisting of Y element and rare earth elements and -0.5<x<0.2; copper oxide-based high temperature superconducting materials having the chemical formula (Bi1-xPbx)2Sr2Can-1CunO2n+4+y, where 0<x<0.4, -0.5<y<0.5 and n=1, 2 or 3; and superconducting materials which contain the chemical formula MgB2 as a main component.
[claim9]
9. The superconducting film as claimed in claim 1, wherein said defect inducing parts are formed from a metal, an intermetallic compound, a nitride or an oxide.
[claim10]
10. The superconducting film as claimed in claim 1, wherein said superconductor layer is formed from a plurality of layers and nano grooves are formed in each of said plurality of layers except a top layer.
[claim11]
11. A superconducting film comprising: a substrate having a surface;
a superconductor layer formed on said surface of the substrate;
rows of nano holes formed in said substrate, each of the nano holes having a defined diameter, wherein the nano holes define a current flowing direction when current flows through the superconductor layer;
rows of defect inducing parts formed in said nano holes; and
rows of one-dimensional crystal defects in the superconductor layer of said defect inducing parts.
[claim12]
12. The superconducting film as claimed in claim 11, wherein each of said rows of one-dimensional crystal defects is a row of one-dimensional crystal defects which is continuous in a current flowing direction.
[claim13]
13. The superconducting film as claimed in claim 11, wherein each of said rows of one-dimensional crystal defects is an array of discontinuous rows of one-dimensional crystal defects.
[claim14]
14. The superconducting film as claimed in claim 11, wherein said rows of one-dimensional crystal defects are irregularly distributed on the substrate.
[claim15]
15. The superconducting film as claimed in claim 11, wherein said one-dimensional crystal defects are crystal grain boundaries, dislocation arrays, amorphous bodies formed from elements constituting said superconductor layer, nonsuperconductors or low critical temperature superconductors.
[claim16]
16. The superconducting film as claimed in claim 11, wherein said nano holes have a diameter of not more than 100 nm and that the average center to center distance of adjacent rows of nano holes in a direction perpendicular to a flowing current is not more than 500 nm.
[claim17]
17. The superconducting film as claimed in claim 11, wherein said substrate is a substrate of an oxide having a perovskite type crystal structure, a rock-salt type crystal structure, a spinel type crystal structure, an yttrium stabilized zirconia type structure, a fluorite type crystal structure, a rare earth C type crystal structure, or a pyrochlore type crystal structure; or an oxide substrate, a nitride substrate, a semiconductor substrate, a nickel-based alloy substrate, a copper-based alloy substrate or an iron-based alloy substrate on the surface of which a buffer layer is formed from said oxide or boride.
[claim18]
18. The superconducting film as claimed in claim 11, wherein said superconductor layer is formed from a superconducting material selected from the group consisting of copper oxide-based high temperature superconducting materials having a chemical formula of LnBa2Cu3O7+x, where Ln is one or more elements selected from the group consisting of Y element and rare earth elements and -0.5<x<0.2; copper oxide-based high temperature superconducting materials having the chemical formula of (Bi1-xPbx)2Sr2Can-1CunO2n+4+y, where 0<x<0.4, -0.5<y<0.5 and n=1, 2 or 3; and superconducting materials which contain MgB2 as a main component.
[claim19]
19. The superconducting film as claimed in claim 11, wherein said defect inducing parts are formed from a metal, an intermetallic compound, a nitride or an oxide.
[claim20]
20. The superconducting film as claimed in claim 11, wherein said superconductor layer is formed from a plurality of layers and rows of nano holes are formed in each of said plurality of layers except a top layer.
  • 発明者/出願人(英語)
  • MATSUMOTO KANAME
  • MUKAIDA MASASHI
  • YOSHIDA YUTAKA
  • ICHINOSE ATARU
  • HORII SHIGERU
  • CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 505/100
  • 505/477
  • 505/816
参考情報 (研究プロジェクト等) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
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