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Composite material, method of producing the same, and apparatus for producing the same 実績あり

外国特許コード F110005545
整理番号 N072-17WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 92134809
公報番号 20110117373
公報番号 8722196
出願日 平成21年3月2日(2009.3.2)
公報発行日 平成23年5月19日(2011.5.19)
公報発行日 平成26年5月13日(2014.5.13)
国際出願番号 JP2009053877
国際公開番号 WO2009110431
国際出願日 平成21年3月2日(2009.3.2)
国際公開日 平成21年9月11日(2009.9.11)
優先権データ
  • 特願2008-057865 (2008.3.7) JP
  • 特願2008-211238 (2008.8.19) JP
  • 2009JP053877 (2009.3.2) WO
発明の名称 (英語) Composite material, method of producing the same, and apparatus for producing the same 実績あり
発明の概要(英語) Proposed are a composite material having a high adhesiveness, wherein non-penetrating pores that are formed in a silicone surface layer are filled up with a metal or the like without leaving any voids by using the plating technique and the silicone surface layer is coated with the metal or the like, and a method of producing the composite material.
A composite material, which has a high adhesiveness between a second metal or an alloy of the second metal (106a, 106b) and a silicone surface, can be obtained by filling up non-penetrating pores that are formed in the surface of a silicone substrate (100) substantially with a second metal or an alloy of the second metal (106a) with the use of the autocatalytic electroless plating technique wherein a first metal located at the bottom of the non-penetrating pores as described above serves as the starting point, and coating the surface of the silicone substrate (100) with the second metal (106b).
従来技術、競合技術の概要(英語) BACKGROUND ART
There have been conventionally studied surface treatment methods such as metal coating, nonmetal coating, and chemical conversion coating.
So far, various functional composite materials have been created using a matrix of a metal provided on a surface thereof with a film of another metal.
Plating is one of typical examples of the several surface treatment methods.
This plating technique is widely utilized in various industries.
However, such a film of a metal or the like to be formed by plating as described above is not sufficiently adhesive to the matrix unless the matrix is appropriately selected.
For example, silicon, which is most widely used in the fields of semiconductor, MEMS, and the like, is one of the matrices to be provided with a metal film by plating.
However, as having been pointed out, silicon generally has poor adhesion with a plated metal (Patent Document 1, for example).
As one of techniques for improving adhesion of a metal film to silicon, there is disclosed a method of immersing a surface of polycrystalline silicon in a heated aqueous solution of sodium hydroxide (NaOH) to provide unevenness in order to improve adhesion of the surface with a plated metal film (see Patent Document 2).
Also disclosed is a technique of forming a porous layer with use of a special substrate and filling pores in the porous layer with a plating material by displacement plating (Patent Document 3).
Non-Patent Document 1: K. Ito and one other, "Nanohole Patterned Media", Journal FUJITSU, Fujitsu Limited, January 2007, Vol. 58, No. 1, pp. 90-98
Non-Patent Document 2: S. Yae and four others, "Electrochemistry Communications", August 2003, Vol. 5, p. 632
Non-Patent Document 3: K. Tsujino and one other, "Electrochemica Acta", Nov. 20, 2007, Vol. 53, p. 28
Patent Document 1: Japanese Unexamined Patent Publication No. 2004-193337
Patent Document 2: Japanese Unexamined Patent Publication No. S60-4271
Patent Document 3: Japanese Unexamined Patent Publication No. 2006-342402
Patent Document 4: Japanese Unexamined Patent Publication No. S57-105826
Patent Document 5: Japanese Unexamined Patent Publication No. H11-283829
Patent Document 6: Japanese Unexamined Patent Publication No. 2003-288712
Patent Document 7: Japanese Unexamined Patent Publication No. 2004-237429
Patent Document 8: Japanese Unexamined Patent Publication No. 2005-139376
Patent Document 9: Japanese Unexamined Patent Publication No. 2007-533983
Patent Document 10: United States Unexamined Patent Publication No. 2005/0101153

特許請求の範囲(英語) [claim1]
1. A composite material having non-penetrating pores in a silicon surface, wherein: the non-penetrating pores have a maximum depth of 180 nm;
a first metal is located at bottoms of the non-penetrating pores;
a second metal, or an alloy thereof, substantially fills the remaining volume of the non-penetrating pores;
the silicon surface is covered with the second metal or alloy thereof; and
the second metal is adhered to the silicon surface with an adhesibility such that the second metal cannot be detached from the silicon surface when tested according to Japanese Industrial Standard test H8504.
[claim2]
2. The composite material of claim 1, wherein: the non-penetrating pores are formed in the silicon surface by immersing the silicon surface in a solution comprising fluoride ions, the silicon surface having the first metal dispersed thereon in the shapes of particles, islands, or films.
[claim3]
3. The composite material of claim 1, wherein: the silicon surface is porous by provision of the non-penetrating pores.
[claim4]
4. The composite material of any one of claims 1 to 3, wherein: the first metal comprises at least one metal selected from palladium (Pd), silver (Ag), gold (Au), platinum (Pt), and rhodium (Rh).
[claim5]
5. The composite material of claim 1, wherein: the silicon comprises a material selected from single-crystalline silicon, polycrystalline silicon, microcrystalline silicon and amorphous silicon.
[claim6]
6. The composite material of claim 1, wherein the second metal is adhered to the silicon surface with an adhesibility of greater than 426 J/m2.
[claim7]
7. The composite material of claim 1, wherein the second metal adheres to the silicon surface with an adhesibility of greater than 1317 J/m2.
[claim8]
8. The composite material of claim 1, wherein the non-penetrating pores have a maximum depth of 170 nm.
[claim9]
9. The composite material of claim 1, wherein the non-penetrating pores have a maximum depth of 120 nm.
[claim10]
10. A composite material having non-penetrating pores in a silicon surface, wherein: the non-penetrating pores have a maximum depth of 180 nm;
a first metal is located at bottoms of the non-penetrating pores;
a second metal, or an alloy thereof, substantially fills the remaining volume of the non-penetrating pores;
the silicon surface is covered with the second metal or alloy thereof; and
the second metal is adhered to the silicon surface with an adhesibility of greater than 426 J/m2.
[claim11]
11. The composite material of claim 10, wherein the second metal adheres to the silicon surface with an adhesibility of greater than 1317 J/m2.
[claim12]
12. The composite material of claim 10, wherein the non-penetrating pores have a maximum depth of 170 nm.
[claim13]
13. The composite material of claim 10, wherein the non-penetrating pores have a maximum depth of 120 nm.
[claim14]
14. The composite material of claim 10, wherein: the non-penetrating pores are formed in the silicon surface by immersing the silicon surface in a solution comprising fluoride ions, the silicon surface having the first metal dispersed thereon in the shapes of particles, islands, or films.
[claim15]
15. The composite material of claim 10, wherein: the silicon surface is porous by provision of the non-penetrating pores.
[claim16]
16. The composite material of claim 10, wherein: the first metal comprises at least one metal selected from palladium (Pd), silver (Ag), gold (Au), platinum (Pt), and rhodium (Rh).
[claim17]
17. The composite material of claim 10, wherein: the silicon comprises a material selected from single-crystalline silicon, polycrystalline silicon, microcrystalline silicon and amorphous silicon.
  • 発明者/出願人(英語)
  • YAE SHINJI
  • HIRANO TATSUYA
  • MATSUDA HITOSHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 428/450
  • 428/304.4
  • 428/306.6
  • 428/314.8
  • 428/315.5
  • 428/315.7
  • 428/317.9
  • 428/320.2
参考情報 (研究プロジェクト等) CREST Development of Advanced Nanostructured Materials for Energy Conversion and Storage AREA
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