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Two-dimensional patterning method, electronic device using same, and magnetic device fabricating method

外国特許コード F110005546
整理番号 N081-03WO
掲載日 2011年9月7日
出願国 アメリカ合衆国
出願番号 56615804
公報番号 20060211258
公報番号 7495238
出願日 平成16年7月27日(2004.7.27)
公報発行日 平成18年9月21日(2006.9.21)
公報発行日 平成21年2月24日(2009.2.24)
国際出願番号 JP2004011025
国際公開番号 WO2005010968
国際出願日 平成16年7月27日(2004.7.27)
国際公開日 平成17年2月3日(2005.2.3)
優先権データ
  • 特願2003-282196 (2003.7.29) JP
  • 2004JP011025 (2004.7.27) WO
発明の名称 (英語) Two-dimensional patterning method, electronic device using same, and magnetic device fabricating method
発明の概要(英語) A novel two-dimensional patterning method enabling two-dimension patterning without using any photosensitive material and ion milling, wherein a two-dimensional pattern is formed by destroying a blister provided on a substrate by electron or ion irradiation.
従来技術、競合技術の概要(英語) BACKGROUND ART
Conventionally, as two-dimensional patterning technology, combination of lithography and etching has been widely known.
Technology of lithography includes a technique of applying a photosensitive material, and then exposing the photosensitive material by light or electrons by using a mask, and a technique of exposing a photosensitive material directly by focused electron beam (see, for example, non-patent documents 1, 2), and by using the photoresist patterns formed by these techniques of lithography as the mask, etching is executed, and a circuit pattern such as fine electrodes or wiring can be formed on a wafer surface.
There is also a technique called ion milling for directly carving a substrate finely by using FIB (focused ion beam) (see, for example, non-patent documents 3, 4, 5).
Non-patent document 1: M. Rothschild and D. J. Ehrlich, J. Vac. Sci. Tech. B6, 1 (1988)
Non-patent document 2: A. Heuberger, J. Vac. Sci. Tech. B6, 107 (1988)
Non-patent document 3: R. Kubena et al., J. Vac. Sci. Tech. 19, 916 (1981)
Non-patent document 4: T. Ishitani et al., Jpn. J. Appl. Phys. 24, L133 (1985)
Non-patent document 5: J. P. Sudraud et al., J. Vac. Sci. Tech. B6, 234 (1988)

特許請求の範囲(英語) [claim1]
1. A two-dimensional patterning method comprising: implanting gas ions on a substrate in a desired pattern to form a blister having a dome-shaped swelling in a specified depth range in the substrate;
and
destroying the blister by electron irradiation or ion irradiation to form a two-dimensional pattern with a specified depth.
[claim2]
2. The two-dimensional patterning method according to claim 1, further comprising: after forming the blister,forming a film on the blister, anddestroying and removing the blister together with the formed film by electron irradiation or ion irradiation to form a two-dimensional pattern of an uncoated clean surface.
[claim3]
3. The two-dimensional patterning method according to claim 1, further comprising: after forming the blister,executing surface reaction on the blister to form a reacted film, anddestroying and removing the blister together with the reacted film by electron irradiation or ion irradiation to form a two-dimensional pattern of a clean surface.
[claim4]
4. The two-dimensional patterning method according to claim 2, further comprising: after destroying and removing the blister together with the formed film,further forming a film on the surface from which the blister has been destroyed and removed with the use of difference in adsorption probability between the substrate surface protected by the blister and the surface not protected to form a two-dimensional pattern.
[claim5]
5. The two-dimensional patterning method according to claim 3, further comprising: after destroying and removing the blister together with the reacted film, executing chemical reaction on the surface from which the blister has been destroyed and removed with the use of difference in reactivity between the substrate surface protected by the blister and the surface not protected to form a two-dimensional pattern.
[claim6]
6. The two-dimensional patterning method according to claim 1, wherein the substrate is a silicon substrate or a metal substrate.
[claim7]
7. The two-dimensional patterning method according to claim 1, wherein the blister is formed by hydrogen ion irradiation, deuterium ion irradiation, or helium ion irradiation.
[claim8]
8. The two-dimensional patterning method according to claim 1, wherein the blister has a patterned configuration and is formed by ion irradiation through a mask.
[claim9]
9. The two-dimensional patterning method according claim 1, wherein the blister having has a patterned configuration and is formed by using focused ion beam.
[claim10]
10. The two-dimensional patterning method according to claim 1, wherein the irradiation ion is any one of Ar+, Kr+, and Xe+.
[claim11]
11. The two-dimensional patterning method according to claim 1, wherein the two-dimensional pattern is a two-dimensional pattern including a atom of the substrate and a hetero atom.
[claim12]
12. The two-dimensional patterning method according to claim 1, wherein the two-dimensional pattern is a pattern constructed by using a difference in film structure between the substrate and the blister.
[claim13]
13. The two-dimensional patterning method according to claim 1, wherein the two-dimensional pattern is a pattern including film structures where electrical properties are different.
[claim14]
14. The two-dimensional patterning method according to claim 1, wherein the two-dimensional pattern is a pattern including film structures where reactive properties are different.
[claim15]
15. The two-dimensional patterning method according to claim 14, wherein the two-dimensional pattern is a pattern including film structures where affinities are different.
[claim16]
16. The two-dimensional patterning method according to claim 15, wherein the two-dimensional pattern is pattern including a hydrophilic surface and a hydrophobic surface.
[claim17]
17. A manufacturing method of electronic device, wherein the two-dimensional patterning method according to claim 1 is employed.
[claim18]
18. A manufacturing method of magnetic device, wherein the two-dimensional patterning method according to claim 1 is employed.
  • 発明者/出願人(英語)
  • IGARASHI SHINICHI
  • NAKAMURA AKIKO
  • KITAJIMA MASAHIRO
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • NATIONAL INSTITUTE FOR MATERIALS SCIENCE
国際特許分類(IPC)
米国特許分類/主・副
  • 250/492.2
  • 250/492.1
  • 250/492.21
  • 250/492.22
  • 250/492.3
参考情報 (研究プロジェクト等) CREST Nano Virtual Lab (Virtual Laboratory in Nanotechnology Areas) Creation of Innovative Technology by Integration of Nanotechnology with Information. Biological, and Environmental Technologies AREA
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