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Infrared light emitting device, infrared light detecting device, time-domain pulsed spectrometer apparatus, and infrared light emitting method 実績あり

外国特許コード F110005661
整理番号 V238P006WO
掲載日 2011年9月9日
出願国 アメリカ合衆国
出願番号 66342805
公報番号 20070194253
公報番号 7615749
出願日 平成17年9月27日(2005.9.27)
公報発行日 平成19年8月23日(2007.8.23)
公報発行日 平成21年11月10日(2009.11.10)
国際出願番号 JP2005017766
国際公開番号 WO2006035780
国際出願日 平成17年9月27日(2005.9.27)
国際公開日 平成18年4月6日(2006.4.6)
優先権データ
  • 特願2004-286579 (2004.9.30) JP
  • 特願2004-286712 (2004.9.30) JP
  • 2005WO-JP17766 (2005.9.27) WO
発明の名称 (英語) Infrared light emitting device, infrared light detecting device, time-domain pulsed spectrometer apparatus, and infrared light emitting method 実績あり
発明の概要(英語) (US7615749)
There is provided an infrared light emitting device that is capable of polarizing emission light without causing loss of the emission light and having a simple configuration.
Included are a photoconductive layer 22 which generates optical carriers upon being irradiated with pulsed excitation light; a pair of first antenna electrodes 21a for emitting infrared light, which are formed on the photoconductive layer 22 with a gap 32 disposed between tips thereof; a pair of second antenna electrodes 21b for emitting infrared light, which are formed on the photoconductive layer 22 and which are disposed with the gap 32 between tips thereof and having an angle with respect to the first antenna electrodes 21a; and a control unit for independently applying voltages to the first antenna electrodes 21a and the second antenna electrodes 21b.
The voltage applied to the first antenna electrodes 21a and the voltage applied to the second antenna electrodes 21b may be selectively applied at different times or may be simultaneously applied with different phases.
特許請求の範囲(英語) [claim1]
1. An infrared light-emitting device comprising: a photoconductive layer which is irradiated with pulsed excitation light to generate optical carriers;
a pair of first antenna electrodes for emitting infrared light, which are formed on the photoconductive layer with a gap disposed between tips thereof;
a pair or a plurality of pairs of second antenna electrodes for emitting infrared light, which are formed on the photoconductive layer with the gap between tips thereof and having an angle with respect to the first antenna electrodes; and
a control unit for independently applying voltages to the first antenna electrodes and the second antenna electrodes.
[claim2]
2. An infrared light-emitting device according to claim 1, wherein the control unit selectively switches between a voltage applied to the first antenna electrodes and a voltage applied to the second antenna electrodes.
[claim3]
3. An infrared light-emitting device according to claim 1, wherein the control unit applies voltages with different phases to the first antenna electrodes and the second antenna electrodes.
[claim4]
4. A time-domain pulsed spectrometer apparatus comprising: a light source for generating pulsed excitation light; and
an infrared light-emitting device according to claim 1.
[claim5]
5. An infrared light emitting method comprising: applying a voltage to a pair of first antenna electrodes for emitting infrared light, which are formed on a photoconductive layer that generates optical carriers upon being irradiated with pulsed excitation light and which are disposed with a gap between tips thereof; and
applying a voltage to a pair or a plurality of pairs of second antenna electrodes for emitting infrared light, which are formed on the photoconductive layer and which are disposed with the gap between tips thereof and so as to have an angle with respect to the first antenna electrodes.
[claim6]
6. An infrared light emitting device comprising: a photoconductive layer for generating optical carriers upon being irradiated with pulsed excitation light;
a pair of antenna electrodes for emitting infrared light, which are formed on one side surface of the photoconductive layer and which are disposed with a gap between tips thereof; and
an infrared-light-transmitting optics for transmitting infrared light, which is formed at the other side surface of the photoconductive layer in a region corresponding at least to the gap.
[claim7]
7. A time-domain pulsed spectrometer apparatus comprising: a light source for oscillating pulsed excitation light; and
an infrared light emitting device according to claim 6.
[claim8]
8. The time-domain pulsed spectrometer apparatus of claim 7, further comprising: an infrared light detecting device comprising
a photoconductive layer for generating optical carriers upon being irradiated with pulsed excitation light;
a pair of antenna electrodes for detecting infrared light, which are formed on one side surface of the photoconductive layer and which are disposed with a gap between tips thereof; and
a pulsed-excitation-light transmitting optics for transmitting the pulsed excitation light, which is formed at the other side surface of the photoconductive layer in a region corresponding at least to the gap.
[claim9]
9. The time-domain pulsed spectrometer apparatus of claim 7, further comprising: an infrared light detecting device comprising
a photoconductive layer for generating optical carriers upon being irradiated with pulsed excitation light; and
a pair of antenna electrodes for detecting infrared light, which are formed on one side surface of the photoconductive layer and which are disposed with a gap between tips thereof;
wherein a void is formed at the other side surface of the photoconductive layer in a region corresponding to the gap.
[claim10]
10. An infrared light emitting device comprising: a photoconductive layer for generating optical carriers upon being irradiated with pulsed excitation light;
a pair of antenna electrodes for emitting infrared light, which are formed on one side surface of the photoconductive layer and which are disposed with a gap between tips thereof; and
a pulsed-excitation-light transmitting optics for transmitting pulsed excitation light, which is formed at the other side surface of the photoconductive layer in a region corresponding at least to the gap.
[claim11]
11. A time-domain pulsed spectrometer apparatus comprising: a light source for oscillating pulsed excitation light; and
an infrared light emitting device according to claim 10.
[claim12]
12. An infrared light emitting device comprising: a photoconductive layer for generating optical carriers upon being irradiated with pulsed excitation light; and
a pair of antenna electrodes for emitting infrared light, which are formed on one side surface of the photoconductive layer and which are disposed with a gap between tips thereof;
wherein a void is formed at the other side surface of the photoconductive layer in a region corresponding to the gap.
[claim13]
13. A time-domain pulsed spectrometer apparatus comprising: a light source for oscillating pulsed excitation light; and
an infrared light emitting device according to claim 12.
[claim14]
14. An infrared light detecting device comprising: a photoconductive layer for generating optical carriers upon being irradiated with pulsed excitation light;
a pair of antenna electrodes for detecting infrared light, which are formed on one side surface of the photoconductive layer and which are disposed with a gap between tips thereof; and
an infrared-light-transmitting optics for transmitting infrared light, which is formed at the other side surface of the photoconductive layer in a region corresponding at least to the gap.
[claim15]
15. A time-domain pulsed spectrometer apparatus comprising: a light source for oscillating pulsed excitation light; and
an infrared light detecting device according to claim 14.
[claim16]
16. An infrared light detecting device comprising: a photoconductive layer for generating optical carriers upon being irradiated with pulsed excitation light;
a pair of antenna electrodes for detecting infrared light, which are formed on one side surface of the photoconductive layer and which are disposed with a gap between tips thereof; and
a pulsed-excitation-light transmitting optics for transmitting the pulsed excitation light, which is formed at the other side surface of the photoconductive layer in a region corresponding at least to the gap.
[claim17]
17. A time-domain pulsed spectrometer apparatus comprising: a light source for oscillating pulsed excitation light; and
an infrared light detecting device according to claim 16.
[claim18]
18. An infrared light detecting device comprising: a photoconductive layer for generating optical carriers upon being irradiated with pulsed excitation light; and
a pair of antenna electrodes for detecting infrared light, which are fainted on one side surface of the photoconductive layer and which are disposed with a gap between tips thereof;
wherein a void is formed at the other side surface of the photoconductive layer in a region corresponding to the gap.
[claim19]
19. A time-domain pulsed spectrometer apparatus comprising: a light source for oscillating pulsed excitation light; and
an infrared light detecting device according to claim 18.
[claim20]
20. The time-domain pulsed spectrometer apparatus of claim 7, further comprising: an infrared light detecting device comprising a photoconductive layer for generating optical carriers upon being irradiated with pulsed excitation light;
a pair of antenna electrodes for detecting infrared light, which are formed on one side surface of the photoconductive layer and which are disposed with a gap between tips thereof; and
an infrared-light-transmitting optics for transmitting infrared light, which is formed at the other side surface of the photoconductive layer in a region corresponding at least to the gap.
  • 発明者/出願人(英語)
  • NISHIZAWA SEIZI
  • IWAMOTO TOSHIYUKI
  • IHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • G01J003/42
  • G01N021/35F
  • H01S001/02
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