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Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device

外国特許コード F110005713
整理番号 Y0307WO
掲載日 2011年9月12日
出願国 アメリカ合衆国
出願番号 51550103
公報番号 20050215070
公報番号 7157383
出願日 平成15年5月21日(2003.5.21)
公報発行日 平成17年9月29日(2005.9.29)
公報発行日 平成19年1月2日(2007.1.2)
国際出願番号 JP2003006348
国際公開番号 WO2003100844
国際出願日 平成15年5月21日(2003.5.21)
国際公開日 平成15年12月4日(2003.12.4)
優先権データ
  • 特願2002-151521 (2002.5.24) JP
  • 特願2003-022803 (2003.1.30) JP
  • 2003WO-JP06348 (2003.5.21) WO
発明の名称 (英語) Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device
発明の概要(英語) (US7157383)
After cleaning a surface of a silicon substrate ( 1 ), impurities and natural oxide film existing on the silicon substrate ( 1 ) are removed by soaking the silicon substrate ( 1 ) in a 0.5%-by-volume HF aqueous solution for 5 minutes.
The silicon substrate ( 1 ) is rinsed (cleaned) with ultrapure water for five minutes.
Then, the silicon substrate ( 1 ) is soaked for 30 minutes in azeotropic nitric acid heated to an azeotropic temperature of 120.7° C.
In this way, an extremely thin chemical oxide film ( 5 ) is formed on the surface of the silicon substrate ( 1 ).
Subsequently, a metal film ( 6 ) (aluminum-silicon alloy film) is deposited, followed by heating in a hydrogen-containing gas at 200° C. for 20 minutes.
Through the heat processing in the hydrogen-containing gas, hydrogen reacts with interface states and defect states in the chemical oxide film ( 5 ), causing disappearance of the interface states and defect states.
As a result, the quality of the film can be improved.
Thus, it is possible to form a high quality (with low leak current density), extremely thin silicon dioxide film on the silicon substrate at a low temperature with excellent film-thickness controllability.
特許請求の範囲(英語) [claim1]
1. A method of forming an oxide film on a surface of a silicon substrate, comprising the steps of: forming an oxide film on a surface of a silicon substrate by supplying a drug solution or vapor of a drug solution to the surface of the silicon substrate;
depositing a film containing metal atoms on the oxide film;
and
heat-processing the silicon substrate, on which the film containing metal atoms is deposited, the heat processing being conducted at a temperature of 100 deg. C. to 250 deg. C. in an atmosphere of hydrogen gas.
[claim2]
2. A method of forming an oxide film on a sufface of a silicon substrate, comprising the steps of: forming an oxide film on a surface of a silicon substrate by supplying a drug solution or vapor of a drug solution to the surface of the silicon substrate;
and
heat-processing the silicon substrate, on which the oxide film is deposited, the heat processing being conducted at a temperature of 350 deg. C. to 500 deg. C. in an atmosphere of hydrogen gas, without depositing a film containing metal atoms on the oxide film.
[claim3]
3. The method as set forth in claim 1, wherein: the drug solution is selected from the group consisting of nitric acid, sulfuric acid, ozonic water, hydrogen peroxide solution, mixed solution of hydrochloric acid and hydrogen peroxide solution, mixed solution of sulfuric acid and hydrogen peroxide solution, mixed solution of aqueous ammonia and hydrogen peroxide solution, mixed solution of sulfuric acid and nitric acid, nitrohydrochloric acid, perchloric acid, and boiling water.
[claim4]
4. The method as set forth in claim 1, wherein: the drug solution is selected from the group consisting of azeotropic nitric acid that is an azeotropic mixture of nitric acid and water, azeotropic sulfuric acid that is an azeotropic mixture of sulfuric acid and water, and azeotropic perchloric acid that is an azeotropic mixture of perchloric acid and water.
[claim5]
5. The method as set forth in claim 1, wherein: the film containing metal atoms is a film containing metal atoms selected from the group consisting of aluminum, magnesium, nickel, chrome, platinum, palladium, tungsten, titanium, and tantalum.
[claim6]
6. The method as set forth in claim 1, wherein: the atmosphere of hydrogen gas is hydrogen or a mixed gas of hydrogen and a gas selected from the group consisting of nitrogen, argon, neon, water vapor, and oxygen.
[claim7]
7. The method as set forth in claim 6, wherein: the heat processing in the atmosphere of hydrogen gas is conducted for a period within a range of 1 minute to 120 minutes.
[claim8]
8. The method as set forth in claim 1, wherein: a natural oxide film or impurities existing on the surface of the silicon substrate are removed before forming the oxide film on the surface of the silicon substrate.
[claim9]
9. The method as set forth in claim 1, wherein: the silicon substrate is heated in supplying the vapor of a drug solution to the surface of the silicon substrate.
[claim10]
10. The method as set forth in claim 9, wherein: a temperature of the silicon substrate heated in supplying the vapor of a drug solution to the surface of the silicon substrate is within a range of 50 deg. C. to 500 deg. C.
[claim11]
11. A method of manufacturing a semiconductor device, comprising the step of: forming an oxide film on a surface of a silicon substrate by the method as set forth in claim 1.
[claim12]
12. The method as set forth in claim 2, wherein: the drug solution is selected from the group consisting of nitric acid, sulfuric acid, ozonic water, hydrogen peroxide solution, mixed solution of hydrochloric acid and hydrogen peroxide solution, mixed solution of sulfuric acid and hydrogen peroxide solution, mixed solution of aqueous ammonia and hydrogen peroxide solution, mixed solution of sulfuric acid and nitric acid, nitrohydrochloric acid, perchloric acid, and boiling water.
[claim13]
13. The method as set forth in claim 2, wherein: the drug solution is selected from the group consisting of azeotropic nitric acid that is an azeotropic mixture of nitric acid and water, azeotropic sulfuric acid that is an azeotropic mixture of sulfuric acid and water, and azeotropic perchloric acid that is an azeotropic mixture of perchloric acid and water.
[claim14]
14. The method as set forth in any one of claim 2, wherein: the film containing metal atoms is a film containing metal atoms selected from the group consisting of aluminum, magnesium, nickel, chrome, platinum, palladium, tungsten, titanium, and tantalum.
[claim15]
15. The method as set forth in claim 2, wherein: the atmosphere of hydrogen gas is hydrogen or a mixed gas of hydrogen and a gas selected from the group consisting of nitrogen, argon, neon, water vapor, and oxygen.
[claim16]
16. The method as set forth in claim 15, wherein: the heat processing in the atmosphere of hydrogen gas is conducted for a period within a range of 1 minute to 120 minutes.
[claim17]
17. The method as set forth in claim 2, wherein: a natural oxide film or impurities existing on the surface of the silicon substrate are removed before forming the oxide film on the surface of the silicon substrate.
[claim18]
18. The method as set forth in claim 2, wherein: the silicon substrate is heated in supplying the vapor of a drug solution to the surface of the silicon substrate.
[claim19]
19. The method as set forth in claim 18, wherein: a temperature of the silicon substrate heated in supplying the vapor of a drug solution to the surface of the silicon substrate is within a range of 50 deg. C. to 500 deg. C.
[claim20]
20. A method of manufacturing a semiconductor device, comprising the step of: forming an oxide film on a surface of a silicon substrate by the method as set forth in claim 2.
  • 発明者/出願人(英語)
  • KOBAYASHI HIKARU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 438/762
  • 257/E21.082
  • 257/E21.285
  • 257/E29.165
  • 438/579
  • 438/580
  • 438/650
  • 438/761
  • 438/770
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