TOP > 外国特許検索 > Method for preparing borate-based crystal and laser oscillation apparatus

Method for preparing borate-based crystal and laser oscillation apparatus 実績あり

外国特許コード F110005724
整理番号 Y0353WO
掲載日 2011年9月12日
出願国 アメリカ合衆国
出願番号 54531404
公報番号 20060102066
公報番号 7744696
出願日 平成16年2月13日(2004.2.13)
公報発行日 平成18年5月18日(2006.5.18)
公報発行日 平成22年6月29日(2010.6.29)
国際出願番号 JP2004001546
国際公開番号 WO2004079060
国際出願日 平成16年2月13日(2004.2.13)
国際公開日 平成16年9月16日(2004.9.16)
優先権データ
  • 特願2003-035778 (2003.2.13) JP
  • 特願2003-109294 (2003.4.14) JP
  • 2004WO-JP01546 (2004.2.13) WO
発明の名称 (英語) Method for preparing borate-based crystal and laser oscillation apparatus 実績あり
発明の概要(英語) (US7744696)
A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal.
Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.
特許請求の範囲(英語) [claim1]
1. A method for producing a borate-based crystal, which comprises: employing a water-soluble cesium compound and a water-soluble boron compound as starting materials,
dissolving all of the starting materials simultaneously in an amount of water which is 1.0 to 2.5 times the total weight of the starting materials,
forming an aqueous solution with a uniform composition,
evaporating the water in the aqueous solution, followed or not followed by sintering, to form a crystal growth material,
melting the crystal growth material, and
growing a cesium-borate-based crystal of the composition formula:
Cs1-xMxB3O5 (0 <= x<1)
wherein M is an alkaline metal or alkaline earth metal element,
wherein the water-soluble cesium compound is a cesium carbonate compound, and
wherein a decarboxylation reaction occurs in the aqueous solution by dissolving the starting materials in water.
[claim2]
2. The method for producing a borate-based crystal according to claim 1, wherein the water-soluble boron compound is boron oxide or boric acid.
[claim3]
3. The method for producing a borate-based crystal according to claim 1, wherein the aqueous solution is heated to evaporate the water.
[claim4]
4. The method for producing a borate-based crystal according to claim 1, wherein the sintering is carried out within a temperature range of 500 deg. C. or higher and lower than the melting temperature after evaporating the water in the aqueous solution.
[claim5]
5. The method for producing a borate-based crystal according to claim 1, wherein a melt of the crystal growth material is stirred during the crystal growth.
[claim6]
6. The method for producing a borate-based crystal according to claim 1, wherein the grown crystal is heated to reduce a water impurity in the crystal.
[claim7]
7. The method for producing a borate-based crystal according to claim 6, wherein the grown crystal is heated at 100 deg. C. or higher.
[claim8]
8. The method for producing a borate-based crystal according to claim 6, wherein the grown crystal is heated in a gas-substituted atmosphere or an evacuated atmosphere.
  • 発明者/出願人(英語)
  • SASAKI TAKATOMO
  • MORI YUSUKE
  • YOSHIMURA MASASHI
  • NISHIOKA MUNEYUKI
  • FUKUMOTO SATORU
  • MATSUI TOMOYO
  • SAJI TAKASHI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 117/19
  • 117/11
  • 117/13
  • 117/944
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close