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Measuring method of incident light and sensor having spectroscopic mechanism employing it

外国特許コード F110005734
整理番号 Y0386WO
掲載日 2011年9月12日
出願国 アメリカ合衆国
出願番号 56195404
公報番号 20060244089
公報番号 7465915
出願日 平成16年3月25日(2004.3.25)
公報発行日 平成18年11月2日(2006.11.2)
公報発行日 平成20年12月16日(2008.12.16)
国際出願番号 JP2004004210
国際公開番号 WO2004113854
国際出願日 平成16年3月25日(2004.3.25)
国際公開日 平成16年12月29日(2004.12.29)
優先権データ
  • 特願2003-177425 (2003.6.23) JP
  • 2004JP004210 (2004.3.25) WO
発明の名称 (英語) Measuring method of incident light and sensor having spectroscopic mechanism employing it
発明の概要(英語) A method for measuring incident light employing a simple semiconductor structure provided with a single electron-capturing section corresponding to incident light, and a sensor having a spectroscopic mechanism employing the same are provided.
A spectroscopic sensor includes a semiconductor substrate (1), a first diffusion layer (2) provided on the semiconductor substrate (1), a second diffusion layer (3)provided at a part of the first diffusion layer (2), and an electrode (7)film provided on the first diffusion layer (2) with an insulating film (4) provided therebetween, the electrode film (7) transmitting the incident light and being applied with a gate voltage.
In the spectroscopic sensor, the gate voltage is varied, the depth (position) for capturing electrons generated in the first diffusion layer (2) by the incident light is varied so as to correspond to the gate voltage, and a current indicating the quantity of the electrons is measured.
Thereby, wavelength and intensity of the incident light are measured.
従来技術、競合技術の概要(英語) BACKGROUND ART
In an image sensor used in single-CCD video cameras, red, green, and blue filters are provided on each photo detector (e.g., photodiode) to produce color images.
In three-CCD video cameras, incident light is separated into three light components, i.e., red, green, and blue with an optical prism and each of the light components is detected with three separate image sensors.
Hitherto, in order to check wavelength and intensity of incident light, a spectroscopic separation is performed using a grating or the like and the intensity distribution of each light component is then measured with a power meter or the like.
A trial for obtaining color information of red, green, and blue with a single photodiode is also known (refer to Patent Document 1 below).
According to this approach, three diffusion layers having a depth of 0.2 mu m, 0.6 mu m, and 2 mu m are disposed on a silicon substrate so as to overlap with each other, and currents generated from each junction are detected.
[Patent Document 1]
U.S. Pat. No. 5,965,875 (the fourth column to the fifth column, FIG. 6)

特許請求の範囲(英語) [claim1]
1. A spectroscopic sensor comprising:
(a) a semiconductor substrate;(b) a first diffusion layer provided on the semiconductor substrate;(c) a second diffusion layer for taking out electrons captured in the first diffusion layer to the outside, the second diffusion layer being provided at one end of the first diffusion layer;(d) a first electrode that is connected to the second diffusion layer and that takes out the captured electrons to the outside;(e) a second electrode that is connected to another end opposing to the second diffusion layer of the first diffusion layer and that establishes an electric potential of the first diffusion layer;(f) an electrode film provided on the first diffusion layer with an insulating film provided therebetween, the electrode film transmitting incident light and being applied with a gate voltage;
and(g) means that measures wavelength and intensity of the incident light by determining a light intensity (PHI ) at a depth x from the surface of the first diffusion layer on the basis that the light intensity is exponentially attenuated when light is incident on the first diffusion layer, determining the ratio of the intensity of the intensity of the incident light absorbed to a depth W from the surface of the first diffusion layer in which electrons are captured to the intensity of the incident light absorbed to the whole depth of the diffusion layer, and determining a current generated to the depth W.
[claim2]
2. The spectroscopic sensor according to claim 1, wherein the first diffusion layer comprises a p-type diffusion layer, the second diffusion layer comprises an n+ diffusion layer, and the semiconductor substrate comprises an n-type semiconductor substrate.
[claim3]
3. The spectroscopic sensor according to claims 1, wherein the electrode film being applied with a gate voltage is a polycrystalline silicon film doped with an impurity.
[claim4]
4. A color image sensor without a color filter comprising a spectroscopic sensor array including the spectroscopic sensors according to claim 1 being disposed one dimensionally or two-dimensionally, wherein the spectroscopic sensor array is switched with a shift register formed with the spectroscopic sensor array to read signals, the depth for capturing electrons is varied to measure signals at each time, and the intensities of wavelengths of red, green, and blue are calculated from the signals to output color image signals.
[claim5]
5. The color image sensor without a color filter according to claim 4, further comprising a noise-eliminating circuit provided at an output part of the color image signals.
[claim6]
6. The color image sensor without a color filter according to claim 4, wherein the depth for capturing electrons is varied every 1/180 seconds.
[claim7]
7. The spectroscopic sensor according to claim 1, further comprising a mechanism which varies the gate voltage according to the type of the incident light.
[claim8]
8. The spectroscopic sensor according to claim 7, wherein the first diffusion layer comprises a p-type diffusion layer, the second diffusion layer comprises an n+ diffusion layer, and the semiconductor substrate comprises an n-type semiconductor substrate.
[claim9]
9. The spectroscopic sensor according to claim 7, wherein the electrode film being applied with a gate voltage is a polycrystalline silicon film doped with an impurity.
[claim10]
10. A color image sensor without a color filter comprising a spectroscopic sensor array including the spectroscopic sensors according to claim 7 being disposed one dimensionally or two-dimensionally, wherein the spectroscopic sensor array is switched with a shift register formed with the spectroscopic sensor array to read signals, the depth for capturing electrons is varied to measure signals at each time, and the intensities of wavelengths of red, green, and blue are calculated from the signals to output color image signals.
[claim11]
11. A method for measuring incident light employing a semiconductor structure comprising an electrode film transmitting incident light and being applied with a gate voltage;
a first diffusion layer for capturing electrons generated by the incident light, the first diffusion layer being disposed under the electrode film with an insulating film provided therebetween;
a second diffusion layer for taking out electrons captured in the first diffusion layer to the outside, the second diffusion layer being disposed at one end of the first diffusion layer ;
a first electrode that is connected to the second diffusion layer and that takes out the captured electrons to the outside;
and a second electrode that is connected to another end opposing to the second diffusion layer disposed in the first diffusion layer and that establishes an electric potential of the first diffusion layer , wherein the gate voltage is varied, the depth from the surface of the first diffusion layer in which electrons are captured is varied on the basis of wavelength and intensity of the incident light, and a current indicating the quantity of the electrons is measured, wherein a light intensity PHI at a depth x from the surface of the first diffusion layer is determined on the basis that the light intensity is exponentially attenuated when light is incident on the first diffusion layer, the ratio of the intensity of the incident light absorbed to a depth W from the surface of the first diffusion layer, in which electrons are captured to the intensity of the incident light absorbed to the whole depth of the diffusion layer is determined, and a current generated to the depth W is determined, thereby measuring wavelength and intensity of the incident light.
[claim12]
12. The method for measuring incident light according to claim 11, wherein the the gate voltage is varied according to the type of the incident light.
  • 発明者/出願人(英語)
  • SAWADA KAZUAKI
  • ISHIDA MAKOTO
  • MARUYAMA YUKI
  • MUTO HIDEKI
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 250/226
  • 250/208.1
  • 257/443
  • 257/458
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