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Method for manufacturing monocrystalline thin film and monocrystalline thin film device manufactured thereby

外国特許コード F110005760
整理番号 Y0432US2
掲載日 2011年9月14日
出願国 アメリカ合衆国
出願番号 96316810
公報番号 20110073184
公報番号 9130111
出願日 平成22年12月8日(2010.12.8)
公報発行日 平成23年3月31日(2011.3.31)
公報発行日 平成27年9月8日(2015.9.8)
国際出願番号 JP2004019195
国際公開番号 WO2005069356
国際出願日 平成16年12月22日(2004.12.22)
国際公開日 平成17年7月28日(2005.7.28)
優先権データ
  • 特願2004-007754 (2004.1.15) JP
  • 11/585,731 (2007.1.4) US
  • 2004JP019195 (2004.12.22) WO
発明の名称 (英語) Method for manufacturing monocrystalline thin film and monocrystalline thin film device manufactured thereby
発明の概要(英語) The present invention provides a method for manufacturing a monocrystalline film and a device formed by the above method, and according to the method mentioned above, lift-off of the monocrystalline silicon film is preferably performed and a high-purity monocrystalline silicon film can be obtained.
A monocrystalline silicon substrate (template Si substrate) 201 is prepared, and on this monocrystalline silicon substrate 201, an epitaxial sacrificial layer 202 is formed.
Subsequently, on this sacrificial layer 202, a monocrystalline silicon thin film 203 is rapidly epitaxially-grown using a RVD method, followed by etching of the sacrificial layer 202, whereby a monocrystalline silicon thin film 204 used as a photovoltaic layer of solar cells is formed.
特許請求の範囲(英語) [claim1]
1. A method for manufacturing a solar-cell monocrystalline silicon thin film, comprising: (a) preparing a monocrystalline silicon substrate;
(b) forming an epitaxial sacrificial layer on the substrate;
(c) forming a monocrystalline silicon thin film on the sacrificial layer by epitaxial growth at a temperature T( deg. C.) and at a film growth rate GR (mu m/min) which satisfies the condition of
GR>2 * 1012exp [-325(kJ/mol)/8.31 (J/mol.K)/(T+273)(K)]; and
(d) etching the sacrificial layer so as to manufacture a monocrystalline silicon thin film used as a photovoltaic layer for solar-cells.
[claim2]
2. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 1, wherein the epitaxial growth of the monocrystalline silicon thin film is performed by a physical vapor deposition.
[claim3]
3. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 1, wherein the sacrificial layer is crystal silicon comprising crystal defects.
[claim4]
4. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 3, wherein the crystal defects comprises twins, vacancies, interstitial atoms, edge dislocations, and screw dislocations.
[claim5]
5. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 3, wherein the number density of the crystal defects is 1/mu m2 to 1/nm2 at the boundary between the monocrystalline silicon substrate and the silicon sacrificial layer.
[claim6]
6. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 3, further comprising eliminating crystal defects present on the surface of the sacrificial layer following the (b).
[claim7]
7. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 1, wherein the sacrificial layer is highly doped monocrystalline silicon.
[claim8]
8. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 7, wherein a dopant doped in the highly doped monocrystalline silicon is an element of group III or V.
[claim9]
9. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 7, wherein the dopant concentration of the highly doped monocrystalline silicon is 1018 atoms/cm3 or more.
[claim10]
10. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 7, wherein a dopant source is supplied onto the surface of the monocrystalline silicon substrate, whereby the highly doped monocrystalline silicon sacrificial layer is formed.
[claim11]
11. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 7, wherein a silicon source and a dopant source are simultaneously supplied onto the monocrystalline silicon substrate, whereby the highly doped monocrystalline silicon sacrificial layer is formed.
[claim12]
12. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 7, wherein a silicon source and a dopant source are supplied onto the monocrystalline silicon substrate while the ratio between the two sources is controlled with time so as to form a highly doped layer and a lightly doped layer in a silicon film which is rapidly epitaxially-grown, and the former is used as the sacrificial layer and the latter is used as the monocrystalline silicon thin film for a photovoltaic layer of solar cells.
[claim13]
13. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 1, wherein the sacrificial layer comprises compound crystal comprising silicon.
[claim14]
14. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 13, wherein the compound crystal comprising silicon is a metal silicide comprising CoSi2, NiSi2, or CrSi2.
[claim15]
15. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 1, wherein the sacrificial layer comprises crystal containing no silicon.
[claim16]
16. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 1, wherein the sacrificial layer is etched using an aqueous solution comprising hydrofluoric acid, whereby the monocrystalline silicon thin film used as a photovoltaic layer of solar cells is manufactured.
[claim17]
17. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 1, further comprising, following the (c): supporting the monocrystalline silicon thin film used as a photovoltaic layer of solar cells by a support base material, and then etching the silicon sacrificial layer, whereby the monocrystalline silicon thin film used as a photovoltaic layer of solar cells is manufactured.
[claim18]
18. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 1, further comprising forming holes in the monocrystalline silicon substrate at intervals.
[claim19]
19. The method for manufacturing a solar-cell monocrystalline silicon thin film, according to claim 1, further comprising forming a texture structure on the surface of the monocrystalline silicon substrate.
  • 発明者/出願人(英語)
  • NODA SUGURU
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
国際特許分類(IPC)
米国特許分類/主・副
  • 136/261
  • 257/E31.13
  • 438/58
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