TOP > 外国特許検索 > METHOD FOR QUANTITATIVELY EVALUATING CONCENTRATION OF ATOMIC VACANCIES EXISTING IN SILICON WAFER, METHOD FOR MANUFACTURING SILICON WAFER, AND SILICON WAFER MANUFACTURED BY THE METHOD FOR MANUFACTURING SILICON WAFER

METHOD FOR QUANTITATIVELY EVALUATING CONCENTRATION OF ATOMIC VACANCIES EXISTING IN SILICON WAFER, METHOD FOR MANUFACTURING SILICON WAFER, AND SILICON WAFER MANUFACTURED BY THE METHOD FOR MANUFACTURING SILICON WAFER 新技術説明会

外国特許コード F110005884
整理番号 S2009-0720-C0
掲載日 2011年11月9日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2010JP063967
国際公開番号 WO 2011/027670
国際出願日 平成22年8月19日(2010.8.19)
国際公開日 平成23年3月10日(2011.3.10)
優先権データ
  • 特願2009-206397 (2009.9.7) JP
発明の名称 (英語) METHOD FOR QUANTITATIVELY EVALUATING CONCENTRATION OF ATOMIC VACANCIES EXISTING IN SILICON WAFER, METHOD FOR MANUFACTURING SILICON WAFER, AND SILICON WAFER MANUFACTURED BY THE METHOD FOR MANUFACTURING SILICON WAFER 新技術説明会
発明の概要(英語) Disclosed are a quantitative evaluation method, by which concentration of atomic vacancies existing in a silicon wafer can be more efficiently evaluated, a method for manufacturing a silicon wafer, and the silicon wafer manufactured by such manufacturing method. The quantitative evaluation method is provided with: a detection step, wherein ultrasonic pulses are oscillated in a state wherein an external magnetic field is applied to the silicon wafer (26), while the silicon wafer (26) is held at a predetermined temperature, measurement wave pulses formed by propagating the ultrasonic pulses in the silicon wafer (26) are received, and a phase difference between the ultrasonic wave pulses and the measurement wave pulses is detected; and a calculating step wherein an elastic constant is calculated on the basis of the phase difference. The concentration of the atomic vacancies in the silicon wafer (26) is evaluated by changing the external magnetic field and calculating the elastic constant that corresponds to the change of the external magnetic field.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NIIGATA UNIVERSITY
  • 発明者(英語)
  • GOTO, Terutaka
  • KANETA, Hiroshi
  • NEMOTO, Yuichi
  • AKATSU, Mitsuhiro
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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