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FIELD-EFFECT TRANSISTOR AND INTEGRATED CIRCUIT

外国特許コード F110005902
整理番号 WASEDA-200-PCT
掲載日 2011年11月9日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2010JP065234
国際公開番号 WO 2011/037003
国際出願日 平成22年9月6日(2010.9.6)
国際公開日 平成23年3月31日(2011.3.31)
優先権データ
  • 特願2009-218358 (2009.9.24) JP
発明の名称 (英語) FIELD-EFFECT TRANSISTOR AND INTEGRATED CIRCUIT
発明の概要(英語) Provided is a field-effect transistor which operates based on single electrons or atoms and which can be operated at a room temperature and can be densely integrated. A thin film (11) is composed of an amorphous alloy or a metal glass. An electrical insulation film (12) is provided on one surface of the thin film (11). A source electrode (13) and a drain electrode (14) are provided on both ends of the thin film (11). A gate electrode (15) is provided on the surface of the film (12). The thin film (11) has a metal polyhedral structure or a metal cluster having a plurality of conductive islands in which nanoscopic or subnanoscopic gaps or tunnels are formed in a two-dimensional plane or a three-dimensional space. The thin film (11) is configured so that hydrogen dissolved in the metal polyhedral structure or the metal cluster forms voids having a capacitance of a nanoscopic or subnanoscopic diameter, and tunneling of protons or electrons occurs via the voids.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOHOKU UNIVERSITY
  • WASEDA UNIVERSITY
  • 発明者(英語)
  • FUKUHARA Mikio
  • SASAKI Toshio
  • YOSHIDA Shigeru
  • INOUE Akihisa
  • KAWARADA Hiroshi
  • SEKIGUCHI Tetsushi
  • SAITO Mikiko
  • MIZUNO Jun
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
参考情報 (研究プロジェクト等) S2011-0566-N0
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