TOP > 外国特許検索 > PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD

PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD

外国特許コード F110005916
整理番号 E08608WO
掲載日 2011年11月16日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2011JP060581
国際公開番号 WO 2011/138958
国際出願日 平成23年5月6日(2011.5.6)
国際公開日 平成23年11月10日(2011.11.10)
優先権データ
  • 特願2010-118857 (2010.5.24) JP
  • 特願2010-107768 (2010.5.7) JP
  • 特願2010-107764 (2010.5.7) JP
発明の名称 (英語) PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD
発明の概要(英語) A process for producing a functional device, comprising the following steps in this order: a functional solid material precursor layer formation step of applying a functional liquid material on a base material to form a layer of a precursor of a functional solid material (i.e., a precursor layer); a drying step of heating the precursor layer at a first temperature falling within the range from 80 to 250 deg.C to decrease the flowability of the precursor layer previously; an embossing step of embossing the precursor layer while heating the precursor layer at a second temperature falling within the range from 80 to 300 deg.C to form an embossed structure on the precursor layer; and a functional solid material layer formation step of heating the precursor layer at a third temperature that is higher than the second temperature to form a functional solid material layer from the precursor layer.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • SHIMODA, Tatsuya
  • TOKUMITSU, Eisuke
  • MIYASAKO, Takaaki
  • KANEDA, Toshihiko
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,RS,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
参考情報 (研究プロジェクト等) ERATO SHIMODA Nano-Liquid Process AREA
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