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Spin transistors based on spin filter effects and nonvolatile memory using the spin transistors

外国特許コード F110005977
整理番号 K02003TW
掲載日 2011年12月15日
出願国 台湾
出願番号 92120200
公報番号 200405339
公報番号 I310184
出願日 平成15年7月24日(2003.7.24)
公報発行日 平成16年4月1日(2004.4.1)
公報発行日 平成21年5月21日(2009.5.21)
優先権データ
  • 特願2002-217336 (2002.7.25) JP
  • 特願2003-086145 (2003.3.26) JP
発明の名称 (英語) Spin transistors based on spin filter effects and nonvolatile memory using the spin transistors
発明の概要(英語) A novel spin transistor based on spin-filtering in ferromagnetic barrier layers is provided. When the relative magnetization configuration of the ferromagnetic barrier layers 2 and 6 are parallel, up-spin hot electrons 26 are injected into the base 22. Since the energy of the up-spin band edge 9 of the second ferromagnetic barrier layer 6 is lower than that of the up-spin hot electrons 26, the up-spin hot electrons 26 can pass over the conduction band of the second ferromagnetic barrier layer 6 and reach the collector electrode 7, resulting in a collector current. In the case of the anti-parallel magnetization configuration of the ferromagnetic barrier layers 2 and 6, down-spin hot electrons 27 are injected into the base 22. Since the energy of the down-spin band edge 10 of the second ferromagnetic barrier 6 is higher than that of the down-spin hot electros 27, the down-spin hot electrons 27 cannot be transported through the second ferromagnetic barrier layer 6. Thus, they are thermalized in the base 22 due to reflection by spin-dependent scattering at the interface between the base 22 and the collector 23, and form a base current. Therefore, the output characteristics of the proposed spin transistor can be controlled by changing the relative magnetization configuration of the ferromagnetic barrier layers 2 and 6. Using the above-described spin transistor and spin transistors that possess the similar output characteristics, nonvolatile memory has been also provided.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY CORPORATION
  • 発明者(英語)
  • SATOSHI SUGAHARA,
  • MASAAKI TANAKA
国際特許分類(IPC)
参考情報 (研究プロジェクト等) PRESTO Nanostructure and Material Property AREA
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