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Field- effect transistors with spin- dependent output characteristics and their nonvolatile memory applications

外国特許コード F110005978
整理番号 K02006TW
掲載日 2011年12月15日
出願国 台湾
出願番号 93101700
公報番号 200419726
公報番号 I317987
出願日 平成16年1月27日(2004.1.27)
公報発行日 平成16年10月1日(2004.10.1)
公報発行日 平成21年12月1日(2009.12.1)
優先権データ
  • 特願2003-062453 (2003.3.7) JP
  • 特願2003-164398 (2003.6.9) JP
発明の名称 (英語) Field- effect transistors with spin- dependent output characteristics and their nonvolatile memory applications
発明の概要(英語) According to put a gate voltage VGS, an Schottky barrier width on a strong magnetic source caused by a metal spin bank decreases, the up-spin electrons region. At the same time, the down-spin electrons from a nonmagnetic contact 3b caused by energy barrier according to a semiconductor spin band of the strong magnetic source 3a will not run to the channel region. In short, only the up-spin electrons will run to the channel region for the strong magnetic source 3a. Although in condition of the strong magnetic source 3a and a strong magnetic drain 5a to have a parallel magnetic polarization, the up-spin electrons will transfer in the metal spin band of the strong magnetic drain as a drain current, but in condition to have reverse parallel polarization, the up-spin electrons will not transfer in the strong magnetic drain 5a caused by a height &Dgr; Ec of energy barrier according to the semiconductor spin bank on the strong magnetic drain 5a. According to the above principle of operation, it is capable to construct a nonvolatile memory with high performance and high integration density.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • SUGAHARA, SATOSHI,
  • TANAKA, MASAAKI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) PRESTO Nanostructure and Material Property AREA
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