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GRAPHENE OR GRAPHITE THIN FILM, MANUFACTURING METHOD THEREOF, THIN FILM STRUCTURE AND ELECTRONIC DEVICE

外国特許コード F110006026
整理番号 S2008-0378
掲載日 2011年12月27日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2009JP054384
国際公開番号 WO 2009/113472
国際出願日 平成21年3月9日(2009.3.9)
国際公開日 平成21年9月17日(2009.9.17)
優先権データ
  • 特願2008-060097 (2008.3.10) JP
発明の名称 (英語) GRAPHENE OR GRAPHITE THIN FILM, MANUFACTURING METHOD THEREOF, THIN FILM STRUCTURE AND ELECTRONIC DEVICE
発明の概要(英語) Provided are a manufacturing method, a thin film structure and an electronic device having the same, whereby high-quality graphene or graphite thin films compatible with a large surface area can be epitaxially formed on an Si substrate. With the present invention it is possible to obtain a graphene or graphite thin film formed on a cubic SiC crystal thin film, using a cubic SiC crystal thin film having a (111) orientation and formed on an Si substrate (1) as the base material. In addition, the development of ultrahigh-speed devices which will support next-generation, high-speed communication services can be advanced by means of an electronic device having a graphene or graphite thin film structure grown as a crystal on a substrate.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOHOKU UNIVERSITY
  • 発明者(英語)
  • SUEMITSU, Maki
  • KONNO, Atsushi
  • MIYAMOTO, Yu
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW(UTILITY MODEL),BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM(UTILITY MODEL),DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN,HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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