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Sputtering system for depositing thin film and method for depositing thin film

外国特許コード F120006132
整理番号 S2008-0851
掲載日 2012年1月6日
出願国 アメリカ合衆国
出願番号 99284809
公報番号 20110079509
公報番号 8663431
出願日 平成21年5月14日(2009.5.14)
公報発行日 平成23年4月7日(2011.4.7)
公報発行日 平成26年3月4日(2014.3.4)
国際出願番号 JP2009058976
国際公開番号 WO2009139434
国際出願日 平成21年5月14日(2009.5.14)
国際公開日 平成21年11月19日(2009.11.19)
優先権データ
  • 特願2008-127998 (2008.5.15) JP
  • 特願2008-298064 (2008.11.21) JP
  • 特願2009-016289 (2009.1.28) JP
  • 2009JP058976 (2009.5.14) WO
発明の名称 (英語) Sputtering system for depositing thin film and method for depositing thin film
発明の概要(英語) A device and a method of facing target sputtering are provided, which can easily change magnetic flux line patterns between facing targets, thereby enabling to conveniently perform a plurality of kinds of sputtering such as facing target sputtering with facing mode, facing target sputtering with mixed mode composed of facing mode and magnetron mode.
Thus, the device and the method of facing target sputtering effective for each material is provided.
The sputtering device for forming a thin film in which a pair of target holders 2 having targets 1 arranged thereon is provided so as to arrange targets faced to each other.
A pole group including a plurality of pole elements having at least a different pole direction is arranged at the back side of the target holders opposite to surfaces on which the targets are arranged.
The pole elements are any of a permanent magnet 4, a yoke 7, 8 and an electromagnet 13 or a combination of them.
The device includes magnetic flux-line pattern control means for changing magnetic flux-line pattern 5 between the targets faced to each other by moving at least part of the pole elements or changing at least either one of field intensity and direction.
特許請求の範囲(英語) [claim1]
1. A method of sputtering comprising: providing a sputtering device for forming a thin film on a substrate, comprising: first and second target holders that face each other and that are each polygonal;
a first target formed on a holder surface of the first target holder;
a second target formed on a holder surface of the second target holder, the second target facing the first target,
wherein each of the first and second target holders has non-sputtering surfaces that are each different from the holder surfaces;
a first pole group including a plurality of first pole elements each having a different pole direction than that of an adjacent one of the first pole elements, the first pole group being arranged at a back side of the first target holder opposite to said holder surface of the first target holder, the first pole group including a movable first pole element that consists of a permanent magnet that is movable in a first direction away from the first target and in a second direction towards the first target, at least one of the first pole elements being arranged on a rear surface of the first target holder opposite to the holder surface of the first target holder,
wherein each of the first pole elements has a first end positioned closer to the first target holder than a second end thereof and the second end touches only other parts of the respective first pole element in every position of the movable first pole element;
a second pole group including a plurality of second pole elements each having a different pole direction than that of an adjacent one of the second pole elements, the second pole group being arranged at a back side of the second target holder opposite to said holder surface of the second target holder, the second pole elements including a movable second pole element that consists of a permanent magnet that is movable in a first direction away from the second target and in a second direction toward the second target, at least one of the second pole elements being arranged on a rear surface of the second target holder opposite to the holder surface of the second target holder,
wherein each of the second pole elements has a first end positioned closer to the second target holder than a second end thereof and the second end touches only other parts of the respective second pole element in every position of the movable second pole element,
wherein each of the first pole elements is disposed directly across from a respective one of the second pole elements and has the first end thereof facing the first end of the respective second pole element and the first ends have different magnetic polarities from each other;
other pole groups each including a plurality of other pole elements that each have a different pole direction than that of an adjacent one of the other pole elements, the first pole elements, or the second pole elements, the other pole groups being arranged at back sides of the non-sputtering surfaces; and
a magnetic flux-line pattern control means for changing magnetic flux-line patterns between the first and second targets by moving the movable first and second pole elements,
wherein to obtain a facing mode, the magnetic flux-line pattern control means controls both the movable first pole element to move in the corresponding first direction and the movable second pole element to move in the corresponding first direction to positions so that magnetic flux-lines are formed between the first and second targets,
wherein to obtain a mixed mode the magnetic flux-line pattern control means controls both the movable first pole element to move in the corresponding second direction and the movable second pole element to move in the corresponding second direction to positions so that magnetic flux-lines are formed between the first and second targets and each of the first and second targets has curved magnet flux-lines formed thereupon that curve back thereupon;
sputtering in the facing mode so as to coat the substrate with a first layer while controlling a magnetic flux mode of the non-sputtering surfaces to stay in a magnetron mode by controlling the other pole groups to form magnetic flux-lines on the non-sputtering surfaces, wherein the sputtering in the facing mode is performed by the magnetic flux-line pattern control means controlling movement of the first and second movable pole elements in the first directions to adjust a polarity between the first and second targets to form the magnetic flux-lines and thereby forming the first layer as an initial growth layer; and
subsequent to the sputtering in the facing mode, sputtering in the mixed mode so as to coat the substrate with a second layer while controlling the magnetic flux mode of the non-sputtering surfaces to stay in the magnetron mode by controlling the other pole groups to form the magnetic flux-lines on the non-sputtering surfaces, wherein sputtering in the mixed mode is performed by the magnetic flux-line pattern control means controlling movement of the first and second movable pole elements in the second directions to form the curved magnetic flux-lines formed on the first and second targets while the magnetic flux-lines are also formed between the first and second targets.
[claim2]
2. A method according to claim 1, wherein the permanent magnets are separable from the rear surfaces of the first and second target holders by moving the permanent magnets in the first directions.
[claim3]
3. A method according to claim 1, wherein the axes of rotation of the first and second target holders are arranged in a same plane, and surfaces of the first and second targets are movable to face each other by rotating at least one of the first and second target holders.
[claim4]
4. A method according to claim 1, wherein the first and second target holders form one module and the module is provided in a vacuum chamber.
[claim5]
5. A method according to claim 1, further comprising: forming a thin film, wherein the thin film has a multi-layer film structure, and different materials are used for each film, wherein a lowest layer of the multi-layer film includes the initial growth layer and
forming of the second layer completes formation of the thin film, the method further comprising:
rotating the first and second target holders subsequently to sputtering in the mixed mode to form other thin films.
[claim6]
6. A method for sputtering a thin film on a substrate, comprising: providing a sputtering device comprising: first and second target holders that face each other and that are each polygonal, each of the first and second target holders including a holder surface and non-sputtering surfaces that are each different from the holder surfaces;
a first target formed on the holder surface of the first target holder;
a second target formed on the holder surface of the second target holder, the second target facing the first target;
a first pole group including a plurality of first pole elements, the first pole group being arranged at a back side of the first target holder opposite to said holder surface of the first target holder, one of the first pole elements being an electromagnet, at least one of the first pole elements being arranged on a surface of the first target holder opposite to the holder surface of the first target holder;
a second pole group including a plurality of second pole elements, the second pole group being arranged at a back side of the second target holder opposite to said holder surface of the second target holder, one of the second pole elements being an electromagnet, at least one of the second pole elements being arranged on a surface of the second target holder opposite to the holder surface of the second target holder;
other pole groups each including a plurality of other pole elements that includes a non-sputtering electromagnet, each non-sputtering surface having one of the other pole groups arranged at a back side thereof,
wherein each of the first pole elements, except the electromagnet of the first pole group, is disposed directly across from a respective one of the second pole elements, that is not the electromagnet of the second pole group, and has an end facing an end of the respective second pole element so that the ends have different magnetic polarities from each other; and
a magnetic flux-line pattern control means for changing magnetic flux-line patterns between the first and second targets by adjusting currents through the electromagnets of the first and second pole groups and the non-sputtering electromagnets;
sputtering to form a first layer in a first facing mode where magnetic flux-lines are formed between the first and second targets, and in the first facing mode the magnetic flux-line pattern control means controls electrical energy to the non-sputtering electromagnets so that each non-sputtering electromagnet has an opposite pole direction as that of an adjacent pole element of the respective other pole group while no electrical energy is sent to the electromagnets of the first and second pole groups;
sputtering to form a second layer in a second facing mode where magnetic flux-lines are formed between the first and second targets, and in the second facing mode the magnetic flux-line pattern control means controls electrical energy to the electromagnet of the first pole group such that the electromagnet of the first pole group has a same pole direction as that of an adjacent pole element of the first pole elements,
electrical energy to the electromagnet of the second pole group such that the electromagnet of the second pole group has a same pole direction as that of an adjacent pole element of the second pole elements, and
the electrical energy to the non-sputtering electromagnets so that each non-sputtering electromagnet has the opposite pole direction as that of the adjacent pole element of the respective other pole group; and
sputtering to form a third layer in a mixed mode where magnetic flux-lines are formed between the first and second targets and each of the first and second target has formed thereupon curved magnet flux-lines that curve back thereupon, the magnetic flux-line pattern control means controlling the electrical energy to the electromagnet of the first pole group such that the electromagnet of the first pole group has a different pole direction as that of the adjacent pole element of the first pole elements,
the electrical energy to the electromagnet of the second pole group such that the electromagnet of the second pole group has a different pole direction as that of the adjacent pole element of the second pole elements, and
the electrical energy to the non-sputtering electromagnets so that each non-sputtering electromagnet has the opposite pole direction as that of the adjacent pole element of the respective other pole group.
[claim7]
7. A method according to claim 6, wherein the sputtering device further includes a device configured to control direction and strength of electric currents so that at least one of magnetic polarity and strength of each of the electromagnets can be changed.
[claim8]
8. A method according to claim 6, wherein in each of the other pole groups, each of the other pole elements has a different pole direction than that of an adjacent one of the other, first or second pole elements.
[claim9]
9. A method according to claim 6, wherein in the sputtering to form a second layer, the substrate is coated with the second layer and the other pole groups form magnetic flux-lines on the non-sputtering surfaces, and
wherein the sputtering to form a third layer occurs after the sputtering to form a second layer, and in the sputtering to form a third layer the substrate is coated with the third layer, and the other pole groups form the magnetic flux-lines on the non-sputtering surfaces.
[claim10]
10. A method according to claim 9, wherein sputtering to form a second layer includes the magnetic flux-line pattern control means controlling current to the electromagnets of the first and second pole groups to adjust a polarity between the first and second targets to form the magnetic flux-lines between the first and second targets and thereby forming the second layer as part of an initial growth layer, and
sputtering to form a third layer includes the magnetic flux-line pattern control means controlling current to the electromagnets of the first and second pole groups to form the curved magnetic flux-lines formed on the first and second targets while the magnetic flux-lines are also formed between the first and second targets.
[claim11]
11. A method according to claim 9, further comprising: forming a thin film, wherein the thin film has a multi-layer film structure, and different materials are used for each film, wherein a lowest layer of the multi-layer film includes the first layer and the second layer as an initial growth layer, and in each of the sputtering to form a first layer and sputtering to form a second layer the magnetic flux-line pattern control means controls currents to the electromagnets of the first and second pole groups to adjust a polarity between the first and second targets to form the magnetic flux-lines between the first and second targets and thereby forming the initial growth layer, and
sputtering to form a third layer includes the magnetic flux-line pattern control means controlling currents to the electromagnets of the first and second pole groups to form the curved magnetic flux-lines on the first and second targets while the magnetic flux-lines are also formed between the first and second targets to thereby form the third layer and completing formation of the thin film, the method further comprising:
rotating the first and second target holders subsequently to sputtering to form the third layer in the mixed mode to form other thin films.
[claim12]
12. A method according to claim 6, wherein the axes of rotation of the first and second target holders are arranged in a same plane, and surfaces of the first and second targets are movable to face each other by rotating at least one of the first and second target holders.
[claim13]
13. A method according to claim 6, wherein the first and second target holders form one module and the module is provided in a vacuum chamber.
  • 発明者/出願人(英語)
  • MOROHASHI SHINICHI
  • YAMAGUCHI UNIVERSITY
国際特許分類(IPC)
米国特許分類/主・副
  • 204/192.12
  • 204/192.1
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