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OXIDE HIGH-TEMPERATURE SUPERCONDUCTOR AND ITS PRODUCTION METHOD

外国特許コード F040000632
整理番号 F040000632
掲載日 2005年2月22日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2002JP009049
国際公開番号 WO 2003/023094
国際出願日 平成14年9月5日(2002.9.5)
国際公開日 平成15年3月20日(2003.3.20)
優先権データ
  • 特願2001-270445 (2001.9.6) JP
発明の名称 (英語) OXIDE HIGH-TEMPERATURE SUPERCONDUCTOR AND ITS PRODUCTION METHOD
発明の概要(英語) An oxide high-temperature superconductor in which an oxide high-temperature superconductive thin film high in crystal perfection and excellent in crystal orientation is formed on a crystal substrate of low dielectric constant and its production method are disclosed. When an oxide high-temperature superconductor in which an oxide high-temperature superconductive thin film containing Ba as a constituent element is formed on a sapphire R-face (1, -1, 0, 2) substrate is produced, a first buffer layer made of CeO3 for relaxing the lattice mismatching between the sapphire R-face (1, -1, 0, 2) substrate and the oxide high-temperature superconductive thin film is formed on the the sapphire R-face (1, -1, 0, 2) substrate, a second buffer layer in which Ba of the oxide high-temperature superconductor is replaced with Sr is formed on the first buffer layer, and an oxide high-temperature superconductive thin film is epitaxially grown on the second buffer layer. Even if the material of the firt buffer layer for relaxing the lattice mismatching of the oxide high-temperature superconductive thin film tends to cause an interface reaction with Ba in the oxide high-temperature superconductive thin film, the second buffer layer prevents the interface reaction, thereby epitaxially growing an oxide high-temperature superconductive thin film excellent in crystal perfection and crystal orientation.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • Japan Science And Technology Corporation
  • 発明者(英語)
  • Ihara, Hideo
  • Athinarayanan, Sundaresan
国際特許分類(IPC)
指定国 CN IN JP US AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LU MC NL PT SE SK TR
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