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OXIDE FILM, PROCESS FOR PRODUCING SAME, TARGET, AND PROCESS FOR PRODUCING SINTERED OXIDE 新技術説明会 実績あり

外国特許コード F120006361
整理番号 S2010-0421-C0
掲載日 2012年3月26日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2010JP073700
国際公開番号 WO 2011/092993
国際出願日 平成22年12月28日(2010.12.28)
国際公開日 平成23年8月4日(2011.8.4)
優先権データ
  • 特願2010-170331 (2010.7.29) JP
  • 特願2010-020343 (2010.2.1) JP
発明の名称 (英語) OXIDE FILM, PROCESS FOR PRODUCING SAME, TARGET, AND PROCESS FOR PRODUCING SINTERED OXIDE 新技術説明会 実績あり
発明の概要(英語) Disclosed is an oxide film which is a film of an oxide containing one transition element selected from a group consisting of niobium (Nb) and tantalum (Ta) and further containing copper (Cu) (the film may contain incidental impurities). This oxide film is an arrangement of fine crystals, an amorphous film containing fine crystals, or an amorphous film which each shows no distinct diffraction peak in XRD (X-ray diffraction) analysis as shown by the charts of Fig. 5 that show the results of XRD analysis of a first oxide film and a second oxide film, and has p-type conductivity. This oxide film can have higher p-type conductivity than conventional oxide films. Since this oxide film is the arrangement of fine crystals, amorphous film containing fine crystals, or amorphous film as described above, formation thereof on a large substrate is easy. The oxide film hence is suitable for industrial production.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • RYUKOKU UNIVERSITY
  • 発明者(英語)
  • YAMAZOE, Seiji
  • WADA, Takahiro
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,RS,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)

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