TOP > 外国特許検索 > PHOTOINDUCED CARRIER LIFETIME MEASURING METHOD, LIGHT INCIDENCE EFFICIENCY MEASURING METHOD, PHOTOINDUCED CARRIER LIFETIME MEASURING DEVICE, AND LIGHT INCIDENCE EFFICIENCY MEASURING DEVICE

PHOTOINDUCED CARRIER LIFETIME MEASURING METHOD, LIGHT INCIDENCE EFFICIENCY MEASURING METHOD, PHOTOINDUCED CARRIER LIFETIME MEASURING DEVICE, AND LIGHT INCIDENCE EFFICIENCY MEASURING DEVICE

外国特許コード F120006530
整理番号 S2010-0661-C0
掲載日 2012年5月8日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2010JP065227
国際公開番号 WO 2011/099191
国際出願日 平成22年9月6日(2010.9.6)
国際公開日 平成23年8月18日(2011.8.18)
優先権データ
  • 特願2010-030658 (2010.2.15) JP
発明の名称 (英語) PHOTOINDUCED CARRIER LIFETIME MEASURING METHOD, LIGHT INCIDENCE EFFICIENCY MEASURING METHOD, PHOTOINDUCED CARRIER LIFETIME MEASURING DEVICE, AND LIGHT INCIDENCE EFFICIENCY MEASURING DEVICE
発明の概要(英語) Disclosed is a photoinduced carrier lifetime measuring method enabling measurement of the effective lifetime of photoinduced carriers in a semiconductor substrate with high accuracy irrespective of the surface state of the sample. A semiconductor substrate is periodically irradiated with a pulse of induction light and with a microwave. The microwave transmitted through the semiconductor substrate or reflected from the semiconductor substrate is detected. On the basis of the irradiation time T1 of the pulse irradiation with the induction light, the nonirradiation time T2, and the integrated value of each microwave intensity measured by the detection, the effective lifetime of the photoinduced carriers produced in the semiconductor substrate when the semiconductor substrate is irradiated with the pulse of the induction light is determined.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • National University Corporation Tokyo University of Agriculture and Technology
  • 発明者(英語)
  • SAMESHIMA Toshiyuki
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,JP(UTILITY MODEL),KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
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