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METHOD AND DEVICE FOR FABRICATING A LIGHT-SENSITIVE ELEMENT

外国特許コード F120006548
整理番号 B52-01WO
掲載日 2012年5月10日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2010JP006858
国際公開番号 WO 2011/064993
国際出願日 平成22年11月24日(2010.11.24)
国際公開日 平成23年6月3日(2011.6.3)
優先権データ
  • 特願2009-267811 (2009.11.25) JP
発明の名称 (英語) METHOD AND DEVICE FOR FABRICATING A LIGHT-SENSITIVE ELEMENT
発明の概要(英語) Provided is a method for fabricating light-sensitive elements. Said method makes it easy to fabricate elements sensitive to specific wavelengths without performing material selection. The provided method includes a deposition step in which a material that constitutes a P-type semiconductor (14), an N-type semiconductor (13), or an electrode (12, 15) is deposited while a reverse-bias voltage is applied and the material is illuminated with light of a desired wavelength, said desired wavelength being longer than the absorption wavelength of the material being deposited. During the deposition step, at parts of the surface of the material being deposited in which local shapes (54) are formed, said local shapes being capable of generating near-field light as a result of the illuminating light, the illuminating light of the desired wavelength is absorbed via a non-adiabatic process due to the near-field light, and electrons are generated, resulting in a non-adiabatic flow in the local shapes (54) in which the generated electrons cancel out local electric fields from the reverse-bias voltage. At parts in which the aforementioned local shapes (54) are not yet formed, particles (51) are sequentially adsorbed where local electric fields arise due to the reverse-bias voltage, resulting in a particle-adsorption flow that transitions to a non-adiabatic flow when the local shapes (54) are formed.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • OHTSU, Motoichi
  • KAWAZOE, Tadashi
  • YATSUI, Takashi
  • YUKUTAKE, Sotaro
国際特許分類(IPC)
指定国 AE(UTILITY MODEL),AG,AL(UTILITY MODEL),AM(PROVISIONAL PATENT)(UTILITY MODEL),AO(UTILITY MODEL),AT(UTILITY MODEL),AU,AZ(UTILITY MODEL),BA,BB,BG(UTILITY MODEL),BH(UTILITY MODEL),BR(UTILITY MODEL),BW,BY(UTILITY MODEL),BZ(UTILITY MODEL),CA,CH,CL(UTILITY MODEL),CN(UTILITY MODEL),CO(UTILITY MODEL),CR(UTILITY MODEL),CU(INVENTOR'S CERTIFICATE),CZ(UTILITY MODEL),DE(UTILITY MODEL),DK(UTILITY MODEL),DM,DO(UTILITY MODEL),DZ,EC(UTILITY MODEL),EE(UTILITY MODEL),EG(UTILITY MODEL),ES(UTILITY MODEL),FI(UTILITY MODEL),GB,GD,GE(UTILITY MODEL),GH(UTILITY CERTIFICATE),GM,GT(UTILITY MODEL),HN(UTILITY MODEL),HR(CONSENSUAL PATENT),HU(UTILITY MODEL),ID,IL,IN,IS,KE(UTILITY MODEL),KG(UTILITY MODEL),KM,KN,KP(INVENTOR'S CERTIFICATE)(UTILITY MODEL),KR(UTILITY MODEL),KZ(PROVISIONAL PATENT)(UTILITY MODEL),LA,LC,LK,LR,LS(UTILITY MODEL),LT,LU,LY,MA,MD(UTILITY MODEL),ME,MG,MK,MN,MW,MX(UTILITY MODEL),MY(UTILITY-INNOVATION),MZ(UTILITY MODEL),NA,NG,NI(UTILITY MODEL),NO,NZ,OM(UTILITY MODEL),PE(UTILITY MODEL),PG,PH(UTILITY MODEL),PL(UTILITY MODEL),PT(UTILITY MODEL),RO,RS(PETTY PATENT),RU(UTILITY MODEL),SC,SD,SE,SG,SK(UTILITY MODEL),SL(UTILITY MODEL),SM,ST,SV(UTILITY MODEL),SY,TH(PETTY PATENT),TJ(UTILITY MODEL),TM(PROVISIONAL PATENT),TN,TR(UTILITY MODEL),TT(UTILITY CERTIFICATE),TZ,UA(UTILITY MODEL),UG(UTILITY CERTIFICATE),US,UZ(UTILITY MODEL),VC(UTILITY CERTIFICATE),VN(PATENT FOR UTILITY SOLUTION),ZA,ZM,ZW,EP(AL,AT,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LT,LU,LV,MC,MK,MT,NL,NO,PL,PT,RO,RS,SE,SI,SK,SM,TR),OA(BF(UTILITY MODEL),BJ(UTILITY MODEL),CF(UTILITY MODEL),CG(UTILITY MODEL),CI(UTILITY MODEL),CM(UTILITY MODEL),GA(UTILITY MODEL),GN(UTILITY MODEL),GQ(UTILITY MODEL),GW(UTILITY MODEL),ML(UTILITY MODEL),MR(UTILITY MODEL),NE(UTILITY MODEL),SN(UTILITY MODEL),TD(UTILITY MODEL),TG(UTILITY MODEL)),AP(BW(UTILITY MODEL),GH(UTILITY MODEL),GM(UTILITY MODEL),KE(UTILITY MODEL),LR(UTILITY MODEL),LS(UTILITY MODEL),MW(UTILITY MODEL),MZ(UTILITY MODEL),NA(UTILITY MODEL),SD(UTILITY MODEL),SL(UTILITY MODEL),SZ(UTILITY MODEL),TZ(UTILITY MODEL),UG(UTILITY MODEL),ZM(UTILITY MODEL),ZW(UTILITY MODEL)),EA(AM,AZ,BY,KG,KZ,MD,RU,TJ,TM)
参考情報 (研究プロジェクト等) SORST Selected in Fiscal 2003
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