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METHOD FOR FABRICATING ELECTRODE STRUCTURE HAVING NANOGAP LENGTH, ELECTRODE STRUCTURE HAVING NANOGAP LENGTH OBTAINED THEREBY, AND NANODEVICE

外国特許コード F120006891
整理番号 AF12-08WO
掲載日 2012年9月27日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2012JP055002
国際公開番号 WO 2012121067
国際出願日 平成24年2月28日(2012.2.28)
国際公開日 平成24年9月13日(2012.9.13)
優先権データ
  • 特願2011-050894 (2011.3.8) JP
発明の名称 (英語) METHOD FOR FABRICATING ELECTRODE STRUCTURE HAVING NANOGAP LENGTH, ELECTRODE STRUCTURE HAVING NANOGAP LENGTH OBTAINED THEREBY, AND NANODEVICE
発明の概要(英語) A substrate (1) on which metal layers (2A, 2B) are disposed with a gap therebetween is immersed in an electroless plating solution in which a reducing agent and surfactant are mixed into an electrolyte containing metal ions. The metal ions are reduced by the reducing agent, and while the metal is deposited on the metal layers (2A, 2B), the surfactant adheres to the surface of the metal, and electrodes (4A, 4B), wherein the gap length is controlled to a nanometer size, are formed. Thus, a method for fabricating an electrode structure having a nanogap gap length such that the variations in gap length can be controlled, an electrode structure having a nanogap length in which variations in gap length are suppressed using this fabrication method, and a nanodevice provided with the same are provided.
特許請求の範囲(英語) [claim1]

(Claims machine translated from Japanese)
[claim2]
1. Metal layer having the gap, the reducing agent and the surface active agent being mixed the baseplate which is arranged in opposite, in the electrolyte which includes the metal ion, the metal ion being restored by soaking in the non electric field plated liquid which becomes, by the above-mentioned reducing agent, while the metal precipitating to the above-mentioned metal layer, the above-mentioned surface active agent coming in contact with the surface of the said metal, production method of the electrode structure which forms the electrode opposite which controls the gap length in nano- meter size, possesses nano- gap length.
[claim3]
2. The 1st step which in the baseplate in order to possess the gap, arranges metal layer in opposite and,
In order for the above-mentioned metal layer to have the gap, the reducing agent and the surface active agent being mixed the baseplate which is arranged in opposite, in the electrolyte which includes the metal ion, the metal ion being restored by soaking in the non electric field plated liquid which becomes, by the above-mentioned reducing agent, while the metal precipitating to the above-mentioned metal layer, the above-mentioned surface active agent coming in contact with the surface of the said metal, the 2nd step which forms the electrode opposite which controls the gap length in nano- meter size and,
Production method of the electrode structure which it includes, possesses nano- gap length.
[claim4]
3. Production method of the electrode structure where the aforementioned surface active agent consists of the molecule which possesses the alkyl chain length which corresponds to the aforementioned nano- gap possesses the nano- gap length of statement in claim 1 or 2.
[claim5]
4. Production method of the electrode structure which controls gap length with the aforementioned surface active agent, possesses the nano- gap length of statement in claim 1 or 2.
[claim6]
5. Production method of the electrode structure where hydrochloric acid and sulfuric acid, acetic acid other acids are included in the aforementioned electroless deposition liquid, possess the nano- gap length of statement in claim 1 or 2.
[claim7]
6. Production method of the electrode structure which with the aforementioned 1st step, forms the opposite of the aforementioned metal layer with electronic beam lithography method or photo lithography method, possesses the nano- gap length of statement in claim 2.
[claim8]
7. Production method of the electrode structure which with the aforementioned 1st step, that forms the opposite of the aforementioned metal layer with iodic electroless deposition method, possesses the nano- gap length of statement in claim 2 either electronic beam lithography method and photo lithography methods.
[claim9]
8. Providing the nano- gap, the electrode opposite which is arranged lining up, plural we are arranged,
Standard deviation of each gap length of plural electrode opposites is 0.5nm or 0.6nm, the electrode structure which possesses nano- gap length.
[claim10]
9. The electrode structure which possesses the nano- gap length of statement in claim 8 was had, the nano- device.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • UNIVERSITY OF TSUKUBA
  • 発明者(英語)
  • MAJIMA YUTAKA
  • TERANISHI TOSHIHARU
  • MURAKI TARO
  • TANAKA DAISUKE
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PE PG PH PL PT QA RO RS RU RW SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ MD RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG
参考情報 (研究プロジェクト等) CREST Establishment of Innovative Manufacturing Technology Based on Nanoscience AREA
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