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SiC SEMICONDUCTOR ELEMENT

外国特許コード F120006971
整理番号 S2010-0968-C0
掲載日 2012年10月29日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2011JP004578
国際公開番号 WO 2012/026089
国際出願日 平成23年8月12日(2011.8.12)
国際公開日 平成24年3月1日(2012.3.1)
優先権データ
  • 特願2010-191438 (2010.8.27) JP
発明の名称 (英語) SiC SEMICONDUCTOR ELEMENT
発明の概要(英語)

The invention provides an SiC semiconductor element having fewer interface defects at the interface between the SiC and the insulating film of the SiC semiconductor, as well as improved channel mobility. The semiconductor element is provided with at least an SiC semiconductor substrate and an insulating film in contact with the substrate, wherein the insulating film is formed on a specific crystal plane of the SiC semiconductor substrate, the specific crystal plane being a plane having an off-angle of 10-20 DEG relative to the {11-20} plane toward the [000-1] direction or at an off-angle of 70-80 DEG relative to the (000-1) plane toward the <11-20> direction. Through the use of a specific crystal plane unknown in the prior art, interface defects between the SiC semiconductor substrate and the insulating film can be reduced, and channel mobility of the semiconductor element can be improved. Devices formed with a trench (30) having various crystal planes in the side walls were fabricated, and drain current and channel mobility were measured.

  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OFSCIENCE AND TECHNOLOGY,
  • YANO, HIROSHI,
  • UEOKA, YOSHIHIRO
  • 発明者(英語)
  • YANO, HIROSHI,
  • UEOKA, YOSHIHIRO
国際特許分類(IPC)
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