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QUANTUM NANODOTS, TWO-DIMENSIONAL QUANTUM NANODOT ARRAY AND SEMICONDUCTOR DEVICE USING SAME AND MANUFACTURING METHOD THEREFOR

外国特許コード F130007097
整理番号 S2011-0845-N0
掲載日 2013年1月9日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2012JP065172
国際公開番号 WO 2012/173162
国際出願日 平成24年6月13日(2012.6.13)
国際公開日 平成24年12月20日(2012.12.20)
優先権データ
  • 特願2011-131515 (2011.6.13) JP
発明の名称 (英語) QUANTUM NANODOTS, TWO-DIMENSIONAL QUANTUM NANODOT ARRAY AND SEMICONDUCTOR DEVICE USING SAME AND MANUFACTURING METHOD THEREFOR
発明の概要(英語)

Presented are quantum nanodots, a two-dimensional quantum nanodot array, and a semiconductor device using the same and a manufacturing method therefor. Quantum nanodots (3) are comprised of semiconductors, and the outer diameter of the quantum nanodots in the horizontal direction is no more than twice the radius of the bore of excitors in the semiconductor. A two-dimensional quantum nanodot array (1) is configured so that the quantum nanodots (3) are disposed uniformly in two-dimensions with the gap between the nanodots (3) being greater than 1 nm. An intermediate layer (6) that comprises a semiconductor or an insulator and that fills the area between quantum nanodot arrays (10) may also be included. Since the quantum nanodots are highly oriented and very dense, the quantum confinement effect is high. As a result, direct transition-type luminescence occurs in the quantum nanodots (3), which are comprised of Si. Also, in the two-dimensional quantum nanodot array including the intermediate layer (6), the optical properties and transport properties can be controlled.

  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • TOHOKU UNIVERSITY,
  • SAMUKAWA SEIJI
  • 発明者(英語)
  • SAMUKAWA SEIJI
国際特許分類(IPC)
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