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Method of growing semiconductor crystal

外国特許コード F130007396
整理番号 K02008EP2
掲載日 2013年6月11日
出願国 欧州特許庁(EPO)
出願番号 12199368
公報番号 2575161
公報番号 2575161
出願日 平成16年3月18日(2004.3.18)
公報発行日 平成25年4月3日(2013.4.3)
公報発行日 平成27年5月6日(2015.5.6)
優先権データ
  • 04721667 (2004.3.18) EP
  • 特願2003-076044 (2003.3.19) JP
発明の名称 (英語) Method of growing semiconductor crystal
発明の概要(英語) SiC is a very stable substance, and it is difficult to control the condition of a SiC surface to be suitable for crystal growth in conventional Group III nitride crystal growing apparatuses.
This problem is solved as follows.
The surface of a SiC substrate 1 is rendered into a step-terrace structure by performing a heating process in an atmosphere of HCl gas.
The surface of the SiC substrate 1 is then treated sequentially with aqua regia, hydrochloric acid, and hydrofluoric acid.
A small amount of silicon oxide film formed on the surface of the SiC substrate 1 is etched so as to form a clean SiC surface 3 on the substrate surface.
The SiC substrate 1 is then installed in a high-vacuum apparatus and the pressure inside is maintained at ultrahigh vacuum (such as 10 **-6 to 10 **-8 Pa).
In the ultrahigh vacuum state, a process of irradiating the surface with a Ga atomic beam 5 at time t1 at temperature of 800 deg.C or lower and performing a heating treatment at 800 deg.C or higher is repeated at least once.
The temperature is then set to the growth temperature of an AIN film, and the SiC substrate surface 3 is initially irradiated with A1 atoms 8a in ultrahigh vacuum state, followed by the feeding of N atoms 8b.
特許請求の範囲(英語) [claim1]
1. A crystal growing method comprising the steps of: forming a flat and clean SiC surface; growing AlN under high vacuum by feeding Al and N atoms, wherein feeding of Ga or In as surface control element for controlling the mode of crystal growth of said AlN is started before starting said growing; and characterized in that feeding of Ga or In for controlling the mode of crystal growth of said AlN is terminated after said growing is started.
[claim2]
2. The crystal growing method according to claim 1, wherein said SiC surface has an offset angle of 0 to 15 deg. with respect to the (0001) Si or (000-1) C plane.
[claim3]
3. The crystal growing method according to claim 1 or claim 2, wherein the step of growing said AlN is performed under a vacuum of 10 **-2 to 10 **-4 Pa.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • SUDA JUN
  • MATSUNAMI HIROYUKI
  • ONOJIMA NORIO
国際特許分類(IPC)
指定国 Contracting States: DE FR GB
参考情報 (研究プロジェクト等) PRESTO Nanostructure and Material Property AREA
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