TOP > 外国特許検索 > SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SAME

外国特許コード F130007419
整理番号 S2011-0753-C0
掲載日 2013年6月20日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2012JP062300
国際公開番号 WO 2012/157608
国際出願日 平成24年5月14日(2012.5.14)
国際公開日 平成24年11月22日(2012.11.22)
優先権データ
  • 特願2011-111883 (2011.5.18) JP
発明の名称 (英語) SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SAME
発明の概要(英語)

Provided are: a semiconductor device which is reduced in average forward voltage drop and provides a rectifying element having lower loss

and a method for driving the semiconductor device. A semiconductor device which has a diode structure wherein a p-type layer (7), an i layer (1) and an n-type layer (2) are sequentially formed between an anode electrode (9) and a cathode electrode (3). This semiconductor device is provided with a second n-type layer (8) that is formed on the anode electrode (9) side in parallel with the p-type layer (7), and is also provided with a gate driving circuit (10) that selects the p-type layer (7) or the second n-type layer (8) on the anode electrode (9) side during the forward bias. A gate electrode (5) has a trench structure (4) that is in contact with the p-type layer (7), a second p-type layer (6) and the second n-type layer (8), and an insulating layer (4a) and an electrode are provided within the trench. The gate electrode (5) forms a p-type or n-type channel in the trench surface in accordance with the gate voltage applied thereto from the gate driving circuit (10).

  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KYUSHU INSTITUTE OF TECHNOLOGY,
  • OMURA, ICHIRO,
  • MATSUMOTO, YASUAKI,
  • TSUDA, MOTOHIRO,
  • TSUKUDA, MASANORI
  • 発明者(英語)
  • OMURA, ICHIRO,
  • MATSUMOTO, YASUAKI,
  • TSUDA, MOTOHIRO,
  • TSUKUDA, MASANORI
国際特許分類(IPC)
詳細は、下記「問合せ先」まで直接お問い合わせください。

PAGE TOP

close
close
close
close
close
close