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SiC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF

外国特許コード F130007529
掲載日 2013年7月16日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2012JP005363
国際公開番号 WO 2013/031172
国際出願日 平成24年8月27日(2012.8.27)
国際公開日 平成25年3月7日(2013.3.7)
優先権データ
  • 特願2011-185326 (2011.8.26) JP
発明の名称 (英語) SiC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
発明の概要(英語)

Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8 DEG or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from -8 DEG to 8 DEG in the <1-100> direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal process (thermal etching) to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800 DEG C with hydrogen gas or an inert gas such as a nitrogen gas as the carrier.

  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OFSCIENCE AND TECHNOLOGY,
  • HATAYAMA, TOMOAKI,
  • KOKETSU, HIDENORI,
  • TODOKORO, YOSHIHIRO
  • 発明者(英語)
  • HATAYAMA, TOMOAKI,
  • KOKETSU, HIDENORI,
  • TODOKORO, YOSHIHIRO
国際特許分類(IPC)
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