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METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS, GROUP III NITRIDE CRYSTALS AND SEMICONDUCTOR DEVICE

外国特許コード F130007590
整理番号 S2012-0150-N0
掲載日 2013年7月31日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2013JP050342
国際公開番号 WO 2013/105618
国際出願日 平成25年1月10日(2013.1.10)
国際公開日 平成25年7月18日(2013.7.18)
優先権データ
  • 特願2012-003637 (2012.1.11) JP
発明の名称 (英語) METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS, GROUP III NITRIDE CRYSTALS AND SEMICONDUCTOR DEVICE
発明の概要(英語)

Provided is a method for producing group III nitride crystals whereby group III nitride crystals having a large size and excellent quality with little defects can be produced. The method for producing group III nitride crystals (13) comprises: a seed crystal selection step for selecting multiple portions of a group III nitride crystal layer (11) as seed crystals for the formation and growth of the group III nitride crystals (13)

a contact step for contacting the surface of the seed crystals with an alkali metal melt

and a crystal growth step for reacting a III group element with nitrogen in the alkali metal melt under a nitrogen-containing atmosphere to form the group III nitride crystals (13) and allow the growth thereof. In the aforesaid method for producing group III nitride crystals (13): the seed crystals are hexagonal crystals

in the seed crystal selection step, the seed crystals are positioned so as to almost avoid the overlap of the m-planes of the individual crystals having grown from seed crystals adjacent to each other

and, in the crystal growth step, multiple group III nitride crystals (13) having grown from the multiple seed crystals are bonded together due to the growth of the group III nitride crystals (13).

  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • OSAKA UNIVERSITY
  • 発明者(英語)
  • MORI YUSUKE,
  • IMADE MAMORU,
  • YOSHIMURA MASASHI,
  • HIRAO MIHOKO,
  • IMANISHI MASAYUKI
国際特許分類(IPC)
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