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NANOMETER STANDARD PROTOTYPE AND METHOD FOR MANUFACTURING NANOMETER STANDARD PROTOTYPE

外国特許コード F130007591
整理番号 KG0102-WO01
掲載日 2013年8月5日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2011JP006313
国際公開番号 WO 2013/069067
国際出願日 平成23年11月11日(2011.11.11)
国際公開日 平成25年5月16日(2013.5.16)
発明の名称 (英語) NANOMETER STANDARD PROTOTYPE AND METHOD FOR MANUFACTURING NANOMETER STANDARD PROTOTYPE
発明の概要(英語)

A standard sample (72) for a nanometer standard prototype has a standard length which forms a length reference. This standard sample (72) has a SiC layer in which a stepped/terraced structure is formed. Furthermore, the step height is equal to a full unit height, which is the height of one period in the direction of stacking of SiC molecules, or a half unit height, which is the height of one-half period in the direction of stacking of SiC molecules. In addition, this step height is used as the standard length. Moreover, in microscopes such as STM, in which the measurement environment is a high temperature vacuum, surface reconstruction can occur while preventing a natural oxidation layer on the surface by heating with a vacuum furnace incorporated into the STM. This reconstructed surface has a regular atomic arrangement

therefore, the precision of the step height is not reduced. Therefore, a standard sample that can be used in a high temperature vacuum can be achieved.

  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KWANSEI GAKUIN EDUCATIONAL FOUNDATION,
  • KANEKO, TADAAKI,
  • USHIO, SHOJI
  • 発明者(英語)
  • KANEKO, TADAAKI,
  • USHIO, SHOJI
国際特許分類(IPC)
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