TOP > 外国特許検索 > THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR

外国特許コード F130007654
整理番号 E086P50
掲載日 2013年10月16日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2013JP057621
国際公開番号 WO 2013/141197
国際出願日 平成25年3月18日(2013.3.18)
国際公開日 平成25年9月26日(2013.9.26)
優先権データ
  • 特願2012-068133 (2012.3.23) JP
発明の名称 (英語) THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
発明の概要(英語)

A thin film transistor (100) of the present invention is provided with a gate insulating layer (34), which is formed of an oxide containing lanthanum and zirconium (provided that this oxide may include impurities, and hereinafter the same shall apply with respect to oxides), between a gate electrode (20) and a channel (44). The channel (44) is formed of an oxide for channels, said oxide being composed of: a first oxide that contains indium and zinc, while containing zirconium (Zr) at an atomic ratio of from 0.015 to 0.075 (inclusive) when the indium contained therein is taken as 1

a second oxide that contains indium, while containing zirconium (Zr) at an atomic ratio of from 0.055 to 0.16 (inclusive) when the indium (In) contained therein is taken as 1

or a third oxide that contains indium, while containing lanthanum at an atomic ratio of from 0.055 to 0.16 (inclusive) when the indium contained therein is taken as 1.

  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • SHIMODA, TATSUYA,
  • INOUE, SATOSHI,
  • PHAN, TRONG TUE,
  • MIYASAKO, TAKAAKI,
  • LI, JINWANG
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO SHIMODA Nano-Liquid Process AREA
ライセンスをご希望の方、特許の内容に興味を持たれた方は、問合せボタンを押してください。

PAGE TOP

close
close
close
close
close
close