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Thin film transistor and method for fabricating thin film transistor

外国特許コード F130007705
整理番号 E086P46TW
掲載日 2013年11月25日
出願国 台湾
出願番号 101148896
公報番号 201327841
出願日 平成24年12月21日(2012.12.21)
公報発行日 平成25年7月1日(2013.7.1)
優先権データ
  • 特願2011-281464 (2011.12.22) JP
発明の名称 (英語) Thin film transistor and method for fabricating thin film transistor
発明の概要(英語)

To increase the performance of thin film transistors that use an oxide material for a gate dielectric layer, and to simplify and reduce the energy consumption of the process for fabricating such thin film transistors. One thin film transistor (100) of the present invention is provided with a first oxide layer (32) (may contain unavoidable impurities) that is configured as follows: being provided between a gate electrode (20) and a channel (52)

comprising lanthanum (La) and tantalum (Ta)

and that has a surface (32a) that is formed after being exposed, in the form of a precursor layer which has as a starting material a precursor solution comprising a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes, to hydrochloric acid steam. In addition, in this thin film transistor, the surface (32a) of the first oxide layer (32) is in contact with the channel (52).

  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY,
  • MITSUBISHI MATERIALS CORPORATION,
  • MITSUBISHI MATERIALS ELECTRONIC CHEMICALS CO., LTD
  • 発明者(英語)
  • SHIMODA, TATSUYA,
  • MIYASAKO, TAKAAKI,
  • TSUKADA, HIROKAZU
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO SHIMODA Nano-Liquid Process AREA
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