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PROCESS FOR PRODUCING CATALYST METAL LAYER AND PROCESS FOR PRODUCING GRAPHENE MATERIAL

外国特許コード F130007746
掲載日 2013年12月5日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2013JP054762
国際公開番号 WO 2013/129312
国際出願日 平成25年2月25日(2013.2.25)
国際公開日 平成25年9月6日(2013.9.6)
優先権データ
  • 特願2012-040554 (2012.2.27) JP
発明の名称 (英語) PROCESS FOR PRODUCING CATALYST METAL LAYER AND PROCESS FOR PRODUCING GRAPHENE MATERIAL
発明の概要(英語)

First, a quadrilateral substrate (12) comprising c-plane sapphire is prepared, and nickel is deposited as a catalyst metal on the entire upper surface of the substrate (12) to form a catalyst metal film (14) (see (a)). Next, the catalyst metal film (14) is patterned by lithography to form a catalyst metal film (16) having a given shape (see (b)). Subsequently, the temperature of the catalyst metal film (16) is elevated to 1,000 C and kept at 1,000 C for 20 minutes. The temperature of the catalyst metal film (16) is then lowered from 1,000 C to 800 C at a rate of 5 C/min and is kept at 800 C for 15 hours. Thus, a catalyst metal layer (17) constituted of large grains is obtained (see (c)). Thereafter, a carbon source is supplied to the surface of the catalyst metal layer (17) to grow graphene, and the catalyst metal layer (17) is dissolved away with an acidic solution to take out a graphene material (10) (see (d) to (g)).

  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • MEIJO UNIVERSITY
  • 発明者(英語)
  • NARITSUKA, SHIGEYA,
  • MARUYAMA, TAKAHIRO
国際特許分類(IPC)

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