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NANODEVICE AND MANUFACTURING METHOD FOR SAME

Foreign code F130007748
Posted date Dec 5, 2013
Country WIPO
International application number 2013JP055261
International publication number WO 2013/129535
Date of international filing Feb 27, 2013
Date of international publication Sep 6, 2013
Priority data
  • P2012-042588 (Feb 28, 2012) JP
Title NANODEVICE AND MANUFACTURING METHOD FOR SAME
Abstract

Provided are: a nanodevice which is combined with electronic devices such as a diode, a tunnel element and a MOS transistor

an integrated circuit

and a nanodevice manufacturing method. The nanodevice is provided with: a first insulating layer (2)

one electrode (5A) and another electrode (5B) that are provided so as to comprise a nanogap on the first insulating layer (2)

a metal nanoparticle (7) or a functional molecule that is placed between the one electrode (5A) and the other electrode (5B)

and a second insulating layer (8) that is provided on the first insulating layer (2), the one electrode (5A) and the other electrode (5B), and that buries either the metal nanoparticle (7) or the functional molecule. The second insulating layer (8) functions as a passivation layer.

  • Applicant
  • ※All designated countries except for US in the data before July 2012
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY,
  • MAJIMA YUTAKA,
  • TERANISHI TOSHIHARU,
  • MATSUMOTO KAZUHIKO,
  • MAEHASHI KENZO,
  • AZUMA YASUO,
  • OHNO YASUHIDE,
  • MAEDA KOSUKE,
  • GUILLAUME HUBERT FREDERIC HACKENBERGER
  • Inventor
  • MAJIMA YUTAKA,
  • TERANISHI TOSHIHARU,
  • MATSUMOTO KAZUHIKO,
  • MAEHASHI KENZO,
  • AZUMA YASUO,
  • OHNO YASUHIDE,
  • MAEDA KOSUKE,
  • GUILLAUME HUBERT FREDERIC HACKENBERGER
IPC(International Patent Classification)
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