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THERMOELECTRIC MATERIAL, METHOD FOR PRODUCING SAME, AND THERMOELECTRIC CONVERSION MODULE USING SAME

外国特許コード F130007776
掲載日 2013年12月12日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2013JP063580
国際公開番号 WO 2013/179897
国際出願日 平成25年5月15日(2013.5.15)
国際公開日 平成25年12月5日(2013.12.5)
優先権データ
  • 特願2012-124940 (2012.5.31) JP
発明の名称 (英語) THERMOELECTRIC MATERIAL, METHOD FOR PRODUCING SAME, AND THERMOELECTRIC CONVERSION MODULE USING SAME
発明の概要(英語)

This thermoelectric material is provided with a semiconductor substrate, a semiconductor oxide film that is formed on the substrate, and a thermoelectric layer that is arranged on the oxide film. The semiconductor oxide film is provided with a first nano-opening, and the thermoelectric layer is in the form of a plurality of semiconductor nano-dots piled up on the first nano-opening so as to have a particle packed structure. At least some of the plurality of semiconductor nano-dots have second nano-openings formed in the surfaces thereof, and are connected with each other through the second nano-openings, with the crystal orientations thereof being aligned with each other. This thermoelectric material can be produced through: a step wherein a semiconductor substrate is oxidized, thereby forming a semiconductor oxide film thereon

a step wherein a first nano-opening is formed in the oxide film

and a step wherein a plurality of semiconductor nano-dots are piled up on the first nano-opening by epitaxial growth. A thermoelectric material having excellent thermoelectric conversion performance can be achieved by this configuration.

  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • NAKAMURA, YOSHIAKI,
  • ISOGAWA, MASAYUKI,
  • UEDA, TOMOHIRO,
  • KIKKAWA, JUN,
  • SAKAI, AKIRA,
  • HOSONO, HIDEO
国際特許分類(IPC)
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