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Method for forming amorphous conductive oxide film

外国特許コード F140007815
整理番号 E086P32TW
掲載日 2014年1月20日
出願国 台湾
出願番号 101142899
公報番号 201340217
公報番号 I520228
出願日 平成24年11月16日(2012.11.16)
公報発行日 平成25年10月1日(2013.10.1)
公報発行日 平成28年2月1日(2016.2.1)
優先権データ
  • 特願2011-252387 (2011.11.18) JP
発明の名称 (英語) Method for forming amorphous conductive oxide film
発明の概要(英語) A method for forming an amorphous conductive oxide film, which is characterized by comprising a step wherein a coating film is formed by applying a composition onto a substrate and heating the coating film in an oxidizing atmosphere, said composition containing (A1) a y parts by mole of one or more metal compounds that are selected from the group consisting of carboxylate salts, alkoxides, diketonatos, nitrate salts and halides of a metal that is selected from among lanthanoids (excluding cerium), (A2) a (1 - y) parts by mole of one or more metal compounds that are selected from the group consisting of carboxylate salts, alkoxides, diketonatos, nitrate salts and halides of a metal that is selected from among lead, bismuth, nickel, palladium, copper and silver, (B) 1 part by mole of one or more metal compounds that are selected from the group consisting of carboxylate salts, alkoxides, diketonatos, nitrate salts, halides, nitrosyl carboxylate salts, nitrosyl nitrate salts, nitrosyl sulfate salts and nitrosyl halides of a metal that is selected from among ruthenium, iridium, rhodium and cobalt and (C) a solvent that contains one or more substances that are selected from the group consisting of carboxylic acids, alcohols, ketones, diols and glycol ethers.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • SHIMODA TATSUYA
  • LI JIN-WANG
国際特許分類(IPC)
参考情報 (研究プロジェクト等) ERATO SHIMODA Nano-Liquid Process AREA
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