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SEMICONDUCTOR DEVICE FOR HIGH-VOLTAGE INSULATED GATE POWER, AND METHOD FOR MANUFACTURING SAME コモンズ 新技術説明会

外国特許コード F140007873
整理番号 S2012-0781-C0
掲載日 2014年6月18日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2013JP064943
国際公開番号 WO 2013180186
国際出願日 平成25年5月29日(2013.5.29)
国際公開日 平成25年12月5日(2013.12.5)
優先権データ
  • 特願2012-123462 (2012.5.30) JP
  • 特願2012-195347 (2012.9.5) JP
発明の名称 (英語) SEMICONDUCTOR DEVICE FOR HIGH-VOLTAGE INSULATED GATE POWER, AND METHOD FOR MANUFACTURING SAME コモンズ 新技術説明会
発明の概要(英語) Provided is a high-productivity semiconductor device for high-voltage insulated gate power in which the step for forming a trench gate on a wafer requires only a short period of time, and which is suitable for reducing the thickness and increasing the diameter of the wafer. In the semiconductor device for high-voltage insulated gate power, the width (S), trench depth (DT), gate insulation film thickness (Tox), and gate driving voltage (Vge) of a mesa region that is a structural portion including the portion having the MOS transistor structure and the trench gate, which is the principal part of the structure of a trench IGBT, have an inverse relationship with the scale ratio (k) of size reduction relative to a reference structure. The cell width (2W) is the same as that in the reference structure. The reference structure is such that the scale ratio (k) is equal to or greater than 3 when the trench depth (DT) is 5 to 6 μm, the distance between the centers of adjacent trenches is 3 to 4 μm, the total cell width (2W) is 15 to 20 μm, and the gate driving voltage (Vge) in a conducting state is 15 V.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • KYUSHU INSTITUTE OF TECHNOLOGY
  • 発明者(英語)
  • OMURA ICHIRO
  • TANAKA MASAHIRO
  • TSUKUDA MASANORI
  • MIKI YAMATO
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IS JP KE KG KN KP KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN TD TG
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