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Nano-device, integrated circuit, and manufacturing method of nano-device

外国特許コード F140007926
整理番号 201302-04
掲載日 2014年8月18日
出願国 台湾
出願番号 102107178
公報番号 201344882
公報番号 I591801
出願日 平成25年2月27日(2013.2.27)
公報発行日 平成25年11月1日(2013.11.1)
公報発行日 平成29年7月11日(2017.7.11)
優先権データ
  • 特願2012-042588 (2012.2.28) JP
発明の名称 (英語) Nano-device, integrated circuit, and manufacturing method of nano-device
発明の概要(英語) (TWI591801)
This invention provides a nano-device and an integrated circuit combined with diodes, tunneling element, MOS transistors and other electronic devices, as well as a manufacturing method of the nano-device.
The nano-device comprises: a first insulating layer 2; one electrode 5A and the other electrode 5B provided on the first insulating layer 2 with a nano-gap; a metallic nanoparticle 7 or a functional molecule disposed between the one electrode 5A and the other electrode 5B; and a second insulating layer 8 disposed on the first insulating layer, the one electrode 5A and the other electrode 5B, and embedding any of the metallic nanoparticle and the functional molecule.
The second insulating layer 8 has the function of passivation layer.
特許請求の範囲(英語) [claim1]
1. Kinds of nano equipment, it has to have: The 1st insulating layer; By having the way of nano gap establishes above 1st insulating layer side an electrode and another side the electrode; Disposition and above another side electrodes metal particle between the above side electrode; As well as establishes in the above 1st insulating layer and above side electrode and on the above another side electrode, and installs underground 2nd the insulating layer above metal particle.
[claim2]
2. 1 kinds of nano equipment, it has to have: The 1st insulating layer; By having the way of nano gap establishes above 1st insulating layer side an electrode and another side the electrode; Disposition and above another side electrodes function member between the above side electrode: As well as establishes in the above 1st insulating layer and above side electrode and on the above another side electrode, and installs underground 2nd the insulating layer above function member.
[claim3]
3. According to claim 1, or 2 items of institutes stated the nano equipment, in the above 1st insulating layer, in being relative to the above side's electrode and above another side's electricity extremely disposed the direction to assume in the overlapping direction to have one or the plural number floodgate extremely electrode, and above floodgate extremely electrode by the above 2nd insulating layer superposition.
[claim4]
4. According to claim 1, or 2 items of institutes stated the nano equipment, with exert the voltage in the floodgate of extremely electrode above metal particle, was establishes in the above 2nd insulating layer.
[claim5]
5. According to claim 1, or 2 items of institutes stated the nano equipment, the above 2nd insulating layer Si 3 N 4, SiO 2, Al 2 O 3, MgO any one kind of institute constituted by SiN, SiO, SiON and.
[claim6]
6. According to claim 1, item of institute stated the nano equipment, as well as the above another side's electrode and above metal particles set to exist to have the insulation membrane between the above side's electrode and above metal particles, the above insulation membrane was constituted by the inorganic material or the organic material.
[claim7]
7. 1 kinds of microcircuits, it is forms like the application patent scope the 1st to 6 items of any item of institute to state the nano equipment and electronic installation on the semiconductor foundation plate becoming.
[claim8]
8. 1 kinds of microcircuits, it has to have: Establishes in forming on 1st of the insulating layer semiconductor of electronic installation foundation plates; By having the way of nano gap establishes above 1st insulating layer side an electrode and another side the electrode; Disposition and above another side electrodes metal particle or function member between the above side electrode; As well as establishes in the above 1st insulating layer and above side electrode and on the above another side electrode, and installs underground the 2nd the insulating layer above metal particle or function member; And in a department above plural number of electrode electronic installation leads the through hole to connect in the above 1st insulating layer by way of the establishment in the above side electrode.
[claim9]
9. The manufacture methods of 9.1 nano equipment, it is the metal particle or the function member, disposes, in the establishment has to have of a side nano gaps electrode and another side electricity extremely attaches on the insulating layer foundation plate, because of forms the passivated film in the above side electrode and above another side electrode and above attaches on the insulating layer foundation plate, to install underground metal particle or function member.
[claim10]
10. According to claim 9, item of institute stated the manufacture method of nano equipment, in forming the above passivated film, made above to attach the insulating layer foundation plate to cool.
[claim11]
11. According to claim 9, item of institute stated the manufacture method of nano equipment, the above passivated film was the use catalyzes the CVD law and plasma CVD law and light CVD law and pulse laser sedimentation and any one kind in atomic shell rock pile crystal law and hot CVD law to form.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • MAJIMA YUTAKA
  • TERANISHI TOSHIHARU
  • MATSUMOTO KAZUHIKO
  • MAEHASHI KENZO
  • AZUMA YASUO
  • OHNO YASUHIDE
  • MAEDA KOSUKE
  • HACKENBERGER GUILLAUME HUBERT FREDERIC
国際特許分類(IPC)
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