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Raman scattering light amplification device, method for producing Raman scattering light amplification device, and Raman laser light source using the Raman scattering light amplification device

外国特許コード F140007927
整理番号 K03110TW
掲載日 2014年8月18日
出願国 台湾
出願番号 102108274
公報番号 201409147
出願日 平成25年3月8日(2013.3.8)
公報発行日 平成26年3月1日(2014.3.1)
優先権データ
  • 特願2012-185638 (2012.8.24) JP
発明の名称 (英語) Raman scattering light amplification device, method for producing Raman scattering light amplification device, and Raman laser light source using the Raman scattering light amplification device
発明の概要(英語) A Raman scattering light amplification device is provided.
The device includes a waveguide formed in a photonic crystal (20) on a semiconductor substrate, in which air holes (20a) are formed.
The waveguide has resonant modes with incident light at multiple frequencies.
Frequency difference between one frequency and another frequency of the multiple frequencies equals to the Raman shift frequency in the semiconductor substrate.
The waveguide is formed along the direction with respect to the crystal plane orientation of the semiconductor substrate such that the Raman transition probability expressed by electromagnetic fields of the two resonant modes and Raman tensors of the semiconductor substrate are maximized.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • TAKAHASHI YASUSHI
  • INUI YOSHITAKA
  • ASANO TAKASHI
  • NODA SUSUMU
  • CHIHARA MASAHIRO
国際特許分類(IPC)
参考情報 (研究プロジェクト等) PRESTO Materials and processes for innovative next-generation devices AREA
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