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Semiconductor structure provided with germanium-oxide-containing film on top of germanium layer, and manufacturing method therefor

外国特許コード F140007928
整理番号 AF15-04TW
掲載日 2014年8月18日
出願国 台湾
出願番号 102115227
公報番号 201409566
公報番号 I536454
出願日 平成25年4月29日(2013.4.29)
公報発行日 平成26年3月1日(2014.3.1)
公報発行日 平成28年6月1日(2016.6.1)
優先権データ
  • 特願2012-185277 (2012.8.24) JP
発明の名称 (英語) Semiconductor structure provided with germanium-oxide-containing film on top of germanium layer, and manufacturing method therefor
発明の概要(英語) A semiconductor structure provided with a germanium layer and an insulating film that contains the following: a germanium-oxide-containing film formed on top of the germanium layer; and a high-dielectric-oxide film that is formed on top of the germanium-oxide-containing film and has a higher relative permittivity than silicon oxide.
The EOT of the insulating film is less than or equal to 2 nm, and if a voltage relative to the germanium layer of 1 V over the flat-band voltage is applied to an accumulation-region side of a gold metal film formed on top of the insulating film, the leakage current is less than or equal to 10<SP>-5xEOT+4</SP> A/cm<SP>2</SP>.
特許請求の範囲(英語) [claim1]
1. A semiconductor structurecharacterized bycomprising:
a germanium layer; and
an insulating film that has a film that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide film that is formed on the film including the germanium oxide and has a dielectric constant higher than that of a silicon oxide,
wherein:
an EOT of the insulating film is 2 nm or less; and
on a presumption that an Au acting as a metal film is formed on the insulating film, a leak current density is 10<-5 X EOT + 4>A/cm<2>or less in a case where a voltage of the metal film with respect to the germanium layer is applied from a flat band voltage to an accumulation region side by 1 V.
[claim2]
2. The semiconductor structure as claimed in claim 1,characterized in thatthe high dielectric oxide film includes at least one of a hafnium oxide film, a zirconium oxide film, an aluminum oxide film, an yttrium oxide film, a scandium oxide film and an oxide film of a rare earth element.
[claim3]
3. The semiconductor structure as claimed in claim 1 or 2,characterized in thaton the presumption that the Au acting as the metal film is formed on the insulating film, a capacitance value between the germanium layer and the metal film at a frequency of 50 kHz or more decreases evenly or is constant when the voltage of the metal film with respect to the germanium layer changes from the flat band voltage to an inversion region.
[claim4]
4. The semiconductor structure as claimed in any of claims 1 to 3characterized byfurther comprising a gate electrode on the high dielectric oxide film.
[claim5]
5. The semiconductor structure as claimed in claim 4,characterized in thatlog10µeffis more than -0.59 X log10Ns+ 10.19 when Nsis 5 X 10<12>cm<-2>or more in a case where the germanium layer is a p-type, a face current density in the germanium layer is Ns(cm<-2>) and an electron mobility of the germanium layer is µeff(cm<2>/V·s).
[claim6]
6. A semiconductor structurecharacterized bycomprising:
a germanium layer; and
a germanium oxide film that is formed on the germanium layer, has a density of 3.6 g/cm<3>or more and has an EOT of 2 nm or less.
[claim7]
7. The semiconductor structure as claimed in claim 6,characterized in thaton a presumption that an Au acting as a metal film is formed on the germanium oxide film, a capacitance value between the germanium layer and the metal film at a frequency of 50 kHz or more decreases evenly or is constant when a voltage of the metal film with respect to the germanium layer changes from a flat band voltage to an inversion region.
[claim8]
8. The semiconductor structure as claimed in claim 6 or 7characterized byfurther comprising a gate electrode on the germanium oxide film.
[claim9]
9. A fabricating method of a semiconductor structurecharacterized bycomprising:
a process of forming a high dielectric oxide film on a germanium layer, a dielectric constant of the high dielectric oxide film being larger than that of a silicon oxide; and
a process of forming a film including a germanium oxide between the germanium layer and the high dielectric oxide film by oxidizing the germanium layer through the high dielectric oxide film in an oxygen atmosphere under a condition that a partial pressure of the oxygen at a room temperature is more than 1 atmosphere and a temperature of the germanium layer is 450 degrees C or more and less than 550 degrees C.
[claim10]
10. The fabricating method of the semiconductor structure as claimed in claim 9,characterized in thatthe condition is that the partial pressure of the oxygen at the room temperature is more than 10 atmospheres and the temperature of the germanium layer is 520 degrees C or less.
[claim11]
11. The fabricating method of the semiconductor structure as claimed in claim 9 or 10,characterized in thatthe high dielectric oxide film includes at least one of a hafnium oxide film, a zirconium oxide film, an aluminum oxide film, an yttrium oxide film, a scandium oxide film and an oxide film of a rare earth element.
[claim12]
12. The fabricating method of the semiconductor structure as claimed in any of claims 9 to 11characterized byfurther comprising a process of forming a gate electrode on the high dielectric oxide film.
[claim13]
13. The fabricating method as claimed in claim 9characterized byfurther comprising a process of forming a gate electrode on the high dielectric oxide film,
wherein:
the condition is that the partial pressure of the oxygen at the room temperature is more than 10 atmospheres and the temperature of the germanium layer is 520 degrees C or less, and
the high dielectric oxide film is an yttrium oxide.
[claim14]
14. A fabricating method of a semiconductor structurecharacterized bycomprising a process of forming a germanium oxide film on the germanium layer by oxidizing an upper face of the germanium layer in an oxygen atmosphere under a condition that a partial pressure of the oxygen at a room temperature is more than 1 atmosphere and a temperature of the germanium layer is 450 degrees C or more and less than 550 degrees C.
[claim15]
15. The fabricating method of the semiconductor structure as claimed in claim 14,characterized in thatthe condition is that the partial pressure of the oxygen at the room temperature is more than 10 atmospheres and the temperature of the germanium layer is 520 degrees C or less.
[claim16]
16. The fabricating method as claimed in claim 14 or 15characterized byfurther comprising a process of forming a gate electrode on the germanium oxide film.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • TORIUMI AKIRA
  • LEE CHOONG-HYUN
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST 次世代エレクトロニクスデバイスの創出に資する革新材料・プロセス研究 領域
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