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Memory circuit

外国特許コード F140007929
整理番号 AF15-01TW
掲載日 2014年8月18日
出願国 台湾
出願番号 102117351
公報番号 201411618
公報番号 I582764
出願日 平成25年5月16日(2013.5.16)
公報発行日 平成26年3月16日(2014.3.16)
公報発行日 平成29年5月11日(2017.5.11)
優先権データ
  • 特願2012-114988 (2012.5.18) JP
発明の名称 (英語) Memory circuit
発明の概要(英語) (TWI582764)
A memory circuit provided with: a bistable circuit for storing data; non-volatile elements for storing, in a non-volatile manner, data stored in the bistable circuit, and restoring, in the bistable circuit, the data that has been stored in a non-volatile manner; and a determining part.
The data in the bistable circuit is stored by the determining part in the non-volatile elements when the data in the bistable circuit and the data in the non-volatile elements do not match, and the data in the bistable circuit is not stored by the determining part in the non-volatile elements when the data in the bistable circuit and the data in the non-volatile elements match.
特許請求の範囲(英語) [claim1]
1. Kinds of memory circuits, its characteristic lies in has: The plural number memory element, each memory element contains the two-state circuit and non-volatile part, and this two-state circuit may the memory material, but this non-volatile part may in the non-volatilely storage above two-state circuit the material of memory, and not be volatilely the material of storage will save again in the above two-state circuit;
And the control department, may in the above plural number memory element, material of each memory element determination above two-state circuit and above non-volatile part is whether consistent, when in determining the above two-state circuit with the material of above non-volatile part is consistent, does not store up the material of above two-state circuit in the above non-volatile part, when the determination above two-state circuit with the material of above non-volatile part is inconsistent, then stores up the material of above two-state circuit in the above non-volatile part.
[claim2]
2. Like the request item of 1st item of memory circuit, its characteristic lies in the above non-volatile part affiliation change resistance value storing up the material of above two-state circuit.
[claim3]
3. Like the request item of 1st item of memory circuit, its characteristic lies in an end connection above two-state circuit above non-volatile parts the node, another end connects the pilot wire, when the above control department bases on toward the above two-state circuit memory material the output of above pilot wire, but material of determination above two-state circuit and above non-volatile part is whether consistent.
[claim4]
4. Like the request item of 3rd item of memory circuit, its characteristic lies in the above two-state circuit containing the supplementary 1st node and 2nd node, the above non-volatile part contains the end connection above 1st node, but 1st of the non-volatile part another end connection above pilot wires, as well as the end connection above 2nd node but between another ends and above pilot wires have connected the 2nd non-volatile part.
[claim5]
5. Like the request item of 3rd item of memory circuit, its characteristic lies in has to be possible to read of reading circuit material of above two-state circuit, the above control department bases on the output and above pilot wire output of above reading circuit, but material of determination above two-state circuit and above non-volatile part is whether consistent.
[claim6]
6. Like the request item of 5th item of memory circuit, its characteristic lies in the above two-state circuit containing the supplementary 1st node and 2nd node, the above pilot wire contains the 1st pilot wire with the 2nd pilot wire, the above non-volatile part contains the 1st non-volatile part with the 2nd non-volatile part, this 1st non-volatile part is the end connection above 1st node, but another end connects the 1st pilot wire, but this 2nd non-volatile part is the end connection above 2nd node but another end has connected with the 2nd pilot wires, above control department based on the output and the above 1st pilot wire above reading circuitAnd the output of 2nd pilot wire, but the material of determination above 1st non-volatile part and above 2nd non-volatile part is whether contradictory.
[claim7]
7. Like the request item of 1st item of memory circuit, after its characteristic lies in the above control department received has jumped over the (skip) signal, then does not carry on the material of whether consistent determination above two-state circuit and above non-volatile part.
[claim8]
8. 1 kinds of memory circuits, its characteristic lies in has: The plural number unit, various units contain to be possible of two-state circuit memory material, as well as may in the non-volatilely storage above two-state circuit the material of memory, and not be volatilely the material of storage will save again in the above two-state circuit the non-volatile part, and this plural number unit divides various domains to contain plural number of domain at least 2 unit;
And control department, but on each domain of above plural number domain, in recently again had saved the material after the above two-state circuit, the unit of domain of determination correspondence contains at least one unit, whether already volatilely the material of recomposition above two-state circuit, when the determination has not rewritten, contains in the domain of above correspondence the unit, not of data storage above two-state circuit in the above non-volatile part;
When the determination has rewritten, contains in the domain of above correspondence the unit, of data storage above two-state circuit in the above non-volatile part.
[claim9]
9. Like the request item of 8th item of memory circuit, its characteristic lies in has to be possible on the above plural number domain individual memory whether has rewritten memory of department at least 1 of the material above two-state circuits.
[claim10]
10. Like the request item of 8th item of memory circuit, after its characteristic lies in the above control department received the jump signal, then does not carry on, in recently again had saved the material after the above two-state circuit, the material of two-state circuit above plural number whether already volatilely the determination of recomposition.
[claim11]
11. Like request item 1st or 8 items of memory circuits, its characteristic lies in the above non-volatile part is the ferromagnetic scanning joint element.
[claim12]
12. Like request item 1st or 8 items of memory circuits, its characteristic lies in an end connection above two-state circuit above non-volatile parts the node, another end connects the pilot wire, above in the end and above two-state circuit above non-volatile parts between the above nodes the connection has the 1st switch, the above plural number unit supposes the moment lineup, the unit of line shares may control the switching line of above switch, row of units share the above pilot wire.
[claim13]
13. Like the request item of 12th item of memory circuit, its characteristic lies in the above two-state circuit between the above nodes and output inlets the connection has the 2nd switch, the unit of above line shares may control the above 2nd switch zigzag, the unit of above row shares the above output inlet.
[claim14]
14. 1 kinds of memory circuits, its characteristic lies in has: Ferromagnetic scanning joint element;
The reading circuit, may read in the above ferromagnetic scanning joint element is not volatilely is included in the material;
And the control department, may when the output of above reading circuit with non-volatilely reads to the above ferromagnetic scanning joint element the material is consistent, to the above ferromagnetic scanning joint element does not read above non-volatilely is included in the material, and when the output of above reading circuit with above non-volatilely reads in the material is inconsistent, to the above ferromagnetic scanning joint element reads above non-volatilely is included in the material.
[claim15]
15. Like the request item of 14th item of memory circuit, its characteristic lies in the output and the above ferromagnetic scanning joint element Central Africa above control department decidable above reading circuit volatilely is included in the material is whether consistent, when in determining for consistency, does not read to the above ferromagnetic scanning joint element above non-volatilely is included in the material, when determines as is inconsistent, to the above ferromagnetic scanning joint element reads above non-volatilely is included in the material.
[claim16]
16. When like the request item of 15th item of memory circuit, its characteristic lies in the above control department received the jump signal, then carries on the output and the above ferromagnetic scanning joint element Central Africa above reading circuit volatilely reads in the material whether consistent determination.
  • 出願人(英語)
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • YAMAMOTO SHUICHIRO
  • SHUTO YUSUKE
  • SUGAHARA SATOSHI
国際特許分類(IPC)
参考情報 (研究プロジェクト等) CREST 次世代エレクトロニクスデバイスの創出に資する革新材料・プロセス研究 領域
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