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Nanometer standard prototype and method for manufacturing nanometer standard prototype

外国特許コード F140008015
整理番号 KG0102-EP01
掲載日 2014年10月31日
出願国 欧州特許庁(EPO)
出願番号 11875382
公報番号 2778649
出願日 平成23年11月11日(2011.11.11)
公報発行日 平成26年9月17日(2014.9.17)
国際出願番号 JP2011006313
国際公開番号 WO2013069067
国際出願日 平成23年11月11日(2011.11.11)
国際公開日 平成25年5月16日(2013.5.16)
優先権データ
  • 2011JP006313 (2011.11.11) WO
発明の名称 (英語) Nanometer standard prototype and method for manufacturing nanometer standard prototype
発明の概要(英語) A standard sample (72) that is a nanometer standard prototype has a standard length that serves as a length reference.
The standard sample (72) includes a SiC layer in which a step-terrace structure is formed.
The height of a step is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction.
The height of the step is used as the standard length.
In a microscope such as an STM that is to be measured in a high-temperature vacuum environment, performing heating in a vacuum furnace provided in the STM enables a surface reconstruction to occur while removing a natural oxide film from the surface.
The surface reconstruction has an ordered atomic arrangement.
Therefore, the accuracy of the height of the step is not degraded.
Accordingly, a standard sample usable under a high-temperature vacuum is achieved.
特許請求の範囲(英語) [claim1]
1. A nanometer standard prototype having a standard length that serves as a length reference,
the nanometer standard prototype comprising a substrate that includes a single crystal SiC layer in which a step-terrace structure is formed,
the height of a step formed in the SiC layer being equal to the height of a full unit that corresponds to one periodic of a stack of single crystal SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of single crystal SiC molecules in the stack direction,
the height of the step being used as the standard length.
[claim2]
2. The nanometer standard prototype according to claim 1, wherein
an off angle is provided on a (0001) Si face or a (000-1) C face of the SiC layer of 4H or 6H polytype,
a heat treatment is performed on the substrate under Si vapor pressure in a temperature range of 1500 deg.C or more 2300 deg.C or less, to cause a surface of the substrate to be vapor-etched and planarized to a molecular level and to form a step corresponding to one periodic or one-half periodic of a single crystal SiC molecular arrangement so that a step-terrace structure that is in conformity with the off angle is formed in the surface of the substrate.
[claim3]
3. The nanometer standard prototype according to claim 2, wherein
the heat treatment for the formation of the step-terrace structure is performed in a container made of tantalum metal and including a tantalum carbide layer that is exposed in an internal space of the container.
[claim4]
4. The nanometer standard prototype according to claim 1, wherein
the SiC layer is made of 4H-SiC single crystal or 6H-SiC single crystal.
[claim5]
5. The nanometer standard prototype according to claim 1, wherein
adjusting an off angle of a surface in which the step-terrace structure is formed allows formation of a terrace having any terrace width.
[claim6]
6. The nanometer standard prototype according to claim 1, wherein
a surface of the substrate is a (0001) Si face of the SiC layer of 4H or 6H polytype,
a heat treatment is performed on the substrate under Si vapor pressure in a temperature range of 1500 deg.C or more 2300 deg.C or less, to cause the surface of the substrate to be vapor-etched and planarized to a molecular level and to form a step-terrace structure in the surface of the substrate, each terrace having a surface configuration in which a (2Root 3X2Root 3)-30 deg. pattern or a (62Root 3X62Root 3)-30 deg. pattern including a single crystal SiC molecular arrangement structure is formed.
[claim7]
7. The nanometer standard prototype according to claim 6, wherein
even when the substrate is maintained in the atmosphere so that a natural oxide film is formed on a surface of the SiC layer, heating the substrate in a vacuum state in a temperature range of 800 deg.C or more and 1400 deg.C or less causes the natural oxide film to be removed from the surface of the SiC layer and causes a reconstruction of the single crystal SiC molecular arrangement formed on the surface of the SiC layer to occur so that a (2Root 3X2Root 3)-30 deg. pattern or a (62Root 3X62Root 3)-30 deg. pattern is formed.
[claim8]
8. The nanometer standard prototype according to claim 7, wherein
a predetermined off angle is provided on the (0001) Si face that is the surface of the substrate before planarization of the SiC layer, so that a step-terrace structure is formed in the surface of the substrate at a time of planarization of the SiC layer.
[claim9]
9. The nanometer standard prototype according to claim 6, wherein
the substrate is a conductive substrate given a resistivity of 0.3 OMEGA cm or less by doping of an impurity.
[claim10]
10. The nanometer standard prototype according to claim 1 or 6, wherein
the step-terrace structure is formed in both a Si-surface and a C-surface of the substrate.
[claim11]
11. The nanometer standard prototype according to claim 1 or 6, wherein
the nanometer standard prototype is used as a standard sample for calibration of a measuring instrument.
[claim12]
12. A method for manufacturing a nanometer standard prototype configured such that a step-terrace structure is formed on a substrate whose surface includes a single crystal SiC layer, the height of a step is equal to the height of a full unit that corresponds to one periodic of a stack of single crystal SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of single crystal SiC molecules in the stack direction, and the height of the step is used as a standard length, the method comprising: an off-angle providing step of providing an off angle on a (0001) Si face or a (000-1) C face of a surface of a substrate of 4H or 6H polytype; and a step-terrace structure formation step of forming a step-terrace structure that is in conformity with the off angle in the surface of the substrate by performing a heat treatment on the substrate under Si vapor pressure in a temperature range of 1500 deg.C or more 2300 deg.C or less, to cause the surface of the substrate to be vapor-etched and planarized to a molecular level and to form a step corresponding to one periodic or one-half periodic of a single crystal SiC molecular arrangement.
[claim13]
13. A method for manufacturing a nanometer standard prototype configured such that a step-terrace structure is formed on a substrate whose surface includes a single crystal SiC layer, the height of a step is equal to the height of a full unit that corresponds to one periodic of a stack of single crystal SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of single crystal SiC molecules in the stack direction, and the height of the step is used as a standard length, the method comprising: an off-angle providing step of providing an off angle on a (0001) Si face that is the surface of the substrate; and a surface configuration formation step of performing a heat treatment on the substrate under Si vapor pressure in a temperature range of 1500 deg.C or more 2300 deg.C or less, to cause the surface of the substrate to be vapor-etched and planarized to a molecular level and to form a step corresponding to one full unit or half-unit cell height of a single crystal SiC molecular arrangement so that a step-terrace structure that is in conformity with the off angle is formed in the surface of the substrate, and forming, in each terrace, a surface configuration having a (2Root 3X2Root 3)-30 deg. pattern or a (62Root 3X62Root 3)-30 deg. pattern including a single crystal SiC molecular arrangement structure, wherein, even when the substrate is maintained in the atmosphere so that a natural oxide film is formed on a surface of the SiC layer, heating the substrate in a vacuum state in a temperature range of 800 deg.C or more and 1400 deg.C or less causes the natural oxide film to be removed from the surface of the SiC layer and causes a reconstruction of the single crystal SiC molecular arrangement formed on the surface of the SiC layer to occur so that a (2Root 3X2Root 3)-30 deg. pattern or a (62Root 3X62Root 3)-30 deg. pattern is formed.
[claim14]
14. The method for manufacturing the nanometer standard prototype according to claim 12 or 13, wherein
the nanometer standard prototype is used as a standard sample for calibration of a measuring instrument.
  • 出願人(英語)
  • KWANSEI GAKUIN
  • 発明者(英語)
  • KANEKO TADAAKI
  • USHIO SHOJI
国際特許分類(IPC)
指定国 Contracting States: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
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