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INGAALN-BASED SEMICONDUCTOR ELEMENT

外国特許コード F150008496
掲載日 2015年10月28日
出願国 世界知的所有権機関(WIPO)
国際出願番号 2014JP004419
国際公開番号 WO 2015029435
国際出願日 平成26年8月28日(2014.8.28)
国際公開日 平成27年3月5日(2015.3.5)
優先権データ
  • 特願2013-179984 (2013.8.30) JP
発明の名称 (英語) INGAALN-BASED SEMICONDUCTOR ELEMENT
発明の概要(英語) A transistor having a nitride semiconductor layer as a channel is trialed. The nitride semiconductor layer is formed by sputtering. The deposition temperature is less than 600°C, and a polycrystalline or amorphous Inx Gay Alz N layer is obtained. When the composition represented by general formula Inx Gay Alz N (where x + y + z = 1.0) is within the range of 0.3 ≤ x ≤ 1.0 and 0 ≤ z < 0.4, a transistor (1a) exhibiting an on/off ratio of 102 or greater is obtained. In other words, even though the film is polycrystalline or amorphous, electrical properties equivalent to those of a monocrystalline film are exhibited. Accordingly, there is provided a semiconductor element in which an InGaAlN-based nitride semiconductor layer, which is inexpensive and has exceptional electrical properties, is provided as a channel and in which constraints on manufacturing conditions are significantly resolved.
  • 出願人(英語)
  • ※2012年7月以前掲載分については米国以外のすべての指定国
  • JAPAN SCIENCE AND TECHNOLOGY AGENCY
  • 発明者(英語)
  • FUJIOKA HIROSHI
  • KOBAYASHI ATSUSHI
国際特許分類(IPC)
指定国 National States: AE AG AL AM AO AT AU AZ BA BB BG BH BN BR BW BY BZ CA CH CL CN CO CR CU CZ DE DK DM DO DZ EC EE EG ES FI GB GD GE GH GM GT HN HR HU ID IL IN IR IS JP KE KG KN KP KR KZ LA LC LK LR LS LT LU LY MA MD ME MG MK MN MW MX MY MZ NA NG NI NO NZ OM PA PE PG PH PL PT QA RO RS RU RW SA SC SD SE SG SK SL SM ST SV SY TH TJ TM TN TR TT TZ UA UG US UZ VC VN ZA ZM ZW
ARIPO: BW GH GM KE LR LS MW MZ NA RW SD SL SZ TZ UG ZM ZW
EAPO: AM AZ BY KG KZ RU TJ TM
EPO: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
OAPI: BF BJ CF CG CI CM GA GN GQ GW KM ML MR NE SN TD TG
参考情報 (研究プロジェクト等) CREST Creation of Nanosystems with Novel Functions through Process Integration AREA
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